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EP610DM/B Datasheet(PDF) 4 Page - Rochester Electronics

Part # EP610DM/B
Description  High-performance, 16-macrocell Classic EPLD Pipelined data rates of up to 100 MHz
PDF  9 Pages
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Manufacturer  ROCHESTER [Rochester Electronics]
Direct Link  http://www.rocelec.com/
Logo ROCHESTER - Rochester Electronics

EP610DM/B Datasheet(HTML) 4 Page - Rochester Electronics

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EP610
Specification Number EP610-CI (AT) REV -
Page 4 of 9
Absolute Maximum Ratings
Recommended Operating Conditions
EP610
EP610T
EP610-XX/B
EP610I
Symbol
Parameter
Conditions
Min
Max
Min Max Unit
VCC
Supply voltage
With respect
to GND
-2.0
7.0
-2.0
7.0
V
VI
DC input voltage
-2.0
7.0
-0.5
VCC+
0.5
V
IMAX
DC VCC or GND current
-175
175
mA
IOUT
DC output current, per pin
-25
25
mA
PD
Power dissipation
1000
mW
TSTG
Storage temperature
No bias
-65
150
-65
150
°C
TAMB
Ambient temperature
Under bias
-65
135 (125)
-10
85
°C
TJ
Junction temperature
Under bias
(150)
°C
EP610
EP610T
EP610-XX/B
EP610I
Symbol
Parameter
Conditions
Min
Max
Min Max Unit
VCC
Supply voltage
4.75 (4.5)
5.25 (5.5)
4.75
5.25
V
VI
Input voltage
0
VCC
0
VCC
V
VO
Output voltage
0
VCC
0
VCC
V
TA
Operating Temperature For commerical use
0
70
0
70
°C
TA
Operating Temperature
For industrial use
-40
85
-40
85
°C
TC
Case Temperature
For military use
-55
125
°C
tR
Input rise time
100 (50)
500
ns
tF
Input fall time
100 (50)
500
ns
Recommended Operating Conditions
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIH
High-level input voltage
2.0
VCC + 0.3
V
VIL
Low-level input voltage
-0.3
0.8
V
VOH
High-level TTL output voltage
IOH = -4 mA DC
2.4
V
VOH
High-level CMOS output voltage
IOH = -2 mA DC
3.84
V
VOL
Low-level output voltage
IOL = 4 mA DC
0.45
V
II
Input leakage output
VI = VCC or GND
-10
10
µ
A
IOZ
Tri-state output leakage current VO = VCC or GND
-10
10
µ
A



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