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LM3263TMX/NOPB Datasheet(PDF) 23 Page - Texas Instruments

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Part # LM3263TMX/NOPB
Description  LM3263 High-Current Step-Down DC-DC Converter with MIPI짰 RF Front-End Control Interface for RF Power Amplifiers
PDF  39 Pages
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Manufacturer  TI [Texas Instruments]
Direct Link  http://www.ti.com
Logo TI - Texas Instruments

LM3263TMX/NOPB Datasheet(HTML) 23 Page - Texas Instruments

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LM3263
www.ti.com
SNVS837 – JUNE 2013
APPLICATION INFORMATION
Recommended External Components
Inductor Selection
A 1.5 µH inductor is needed for optimum performance and functionality of the LM3263. In the case of 2G
transmission current bursts, the effective overall RMS current requirements are reduced. Therefore, please
consult with the inductor manufacturers to determine if some of their smaller components will meet your
application needs even though the classical inductor specification does not appear to meet the LM3263 RMS
current specifications.
The LM3263 automatically manages the inductor peak and RMS current (or steady-state current peak) through
the SW pin. The SW pin has two positive current limits. The first is the 1.45A typical (or 1.65A maximum) over-
current protection. It sets the upper steady-state inductor peak current (as detailed in the Electrical
Characteristics Table ILIM,PFET,SteadyState). It is the dominant factor limiting the inductors ISAT requirement. The
second is an over-limit current protection. It limits the maximum peak inductor current during large signal
transients (i.e., < 20 µs) to 1.9A typical (or 2.1A maximum). A minimum inductance of 0.3uH should be
maintained at the second current limit.
The ACB circuit automatically adjusts its output current to keep the steady-state inductor current below the
steady-state peak current limit. Thus, the inductor RMS current will effectively always be less than the
ILIM,PFET,SteadyState during the transmit burst. In addition, as in the case with 2G where the output current comes in
bursts, the effective overall RMS current would be much lower.
For good efficiency, the inductor’s resistance should be less than 0.2
Ω; low DCR inductors (<0.2Ω) are
recommended. Table 2 suggests some inductors and their suppliers.
Table 2. Suggested Inductors and Their Suppliers
ISAT
Model
Vendor
Dimensions (mm)
(30% drop in
DCR
inductance)
DFE201610C1R5N
TOKO
2.2A
120 m
Ω
(1285AS-H-1R5M)
LQM2MPN1R5MG
Murata
2.0A
110 m
Ω
2.0 x 1.6 x 1.0
MAKK2016T1R5M
Taiyo-Yuden
1.9A
115 m
Ω
VLS201610MT-1R5N
TDK
1.4A
151 m
Ω
Capacitor Selection
The LM3263 is designed to use ceramic capacitors for its input and output filters. Use a 10 µF capacitor for the
input and approximately 10 µF actual total output capacitance. Capacitor types such as X5R, X7R are
recommended for both filters. These provide an optimal balance between small size, cost, reliability and
performance for cell phones and similar applications. Table 3 lists suggested part numbers and suppliers. DC
bias characteristics of the capacitors must be considered while selecting the voltage rating and case size of the
capacitor. Smaller case sizes for the output capacitor mitigate piezo-electric vibrations of the capacitor when the
output voltage is stepped up and down at fast rates. However, they have a bigger percentage drop in value with
dc bias. For even smaller total solution size, 0402 (1005) case size capacitors are recommended for filtering. Use
of multiple 2.2 µF or 1µF capacitors can also be considered. For RF Power Amplifier applications, split the output
capacitor between DC-DC converter and RF Power Amplifiers: 10 µF (COUT1) + 4.7 µF (COUT2) + 3 x 1.0 µF
(COUT3) is recommended. The optimum capacitance split is application dependent, and for stability the actual
total capacitance (taking into account effects of capacitor DC bias, temperature de-rating, aging and other
capacitor tolerances) should target 10 µF with 2.5V DC bias (measured at 0.5 VRMS). Place all the output
capacitors very close to the respective device. A high-frequency capacitor (3300 pF) is highly recommended to
be placed next to COUT1.
Copyright © 2013, Texas Instruments Incorporated
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