JS28F128P30TF75A datasheet(68/90 Pages) MICRON

68 / 90 page

P30-65nm SBC

Datasheet

Apr 2010

Order Number: 208033-02

Table 39: Partition and Erase Block Region Information

Table 38: Burst Read Information

Offset

P=10Ah

Length

Description

(Optional flash features and commands)

Add.

Hex

Code

Value

(P+1D)h

Page Mode Read capability

bits 0-7 = “n” such that 2n HEX value represents the number

of read-page bytes. See offset 28h for device word width to

determine page-mode data output width. 00h indicates no

read page buffer.

127:

--04

16 Byte

(P+1E)h

Number of synchronous mode read configuration fields that

follow. 00h indicates no burst capability.

128:

--04

(P+1F)h

Synchronous mode read capability configuration 1

Bits 3-7 = Reserved

bits 0-2 “n” such that 2n+1 HEX value represents the

maximum number of continuous synchronous reads when

the device is configured for its maximum word width. A value

of 07h indicates that the device is capable of continuous

linear bursts that will output data until the internal burst

counter reaches the end of the device’s burstable address

space. This field’s 3-bit value can be written directly to the

Read Configuration Register bits 0-2 if the device is

configured for its maximum word width. See offset 28h for

word width to determine the burst data output width.

129:

--01

(P+20)h

Synchronous mode read capability configuration 2

12A:

--02

(P+21)h

Synchronous mode read capability configuration 3

12B:

--03

(P+22)h

Synchronous mode read capability configuration 4

12C:

--07

Cont

Offset(1)

See table below

P = 10Ah

Description

Address

Bottom

Top

(Optional flash features and commands)

Len

Bot

Top

(P+23)h (P+23)h

12D:

Number of device hardw are-partition regions w ithin the device.

x = 0: a single hardw are partition device (no fields follow ).

x specifies the number of device partition regions containing

one or more contiguous erase block regions.

JS28F128P30TF75A Datasheet(PDF) 68 Page - Micron Technology

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