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JS28F256P33BFE Datasheet(PDF) 51 Page - Micron Technology

Part # JS28F256P33BFE
Description  NumonyxTM StrataFlash Embedded Memory
PDF  90 Pages
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Manufacturer  MICRON [Micron Technology]
Direct Link  http://www.micron.com
Logo MICRON - Micron Technology

JS28F256P33BFE Datasheet(HTML) 51 Page - Micron Technology

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Datasheet
Aug 2009
51
Order Number:320003-08
P33-65nm
Note:
WAIT shown deasserted during asynchronous read mode (RCR.10=0, WAIT asserted low).
Synchronous Specifications(5)
R301
tAVCH/L
Address setup to CLK
9
-
ns
1,6
R302
tVLCH/L
ADV# low setup to CLK
9
-
ns
R303
tELCH/L
CE# low setup to CLK
9
-
ns
R304
tCHQV / tCLQV CLK to output valid
--
17
ns
TSOP
-
20
ns
R305
tCHQX
Output hold from CLK
3
-
ns
1,6
R306
tCHAX
Address hold from CLK
10
-
ns
1,4,6
R307
tCHTV
CLK to WAIT valid
-17
ns
1,6
TSOP
-
20
ns
1,6
R311
tCHVL
CLK Valid to ADV# Setup
3
-
ns
1
R312
tCHTX
WAIT Hold from CLK
3
-
ns
1,6
Notes:
1.
See
Figure 14, “AC Input/Output Reference Waveform” on page 48 for timing measurements and max
allowable input slew rate.
2.
OE# may be delayed by up to tELQV – tGLQV after CE#’s falling edge without impact to tELQV.
3.
Sampled, not 100% tested.
4.
Address hold in synchronous burst read mode is tCHAX or tVHAX, whichever timing specification is satisfied first.
5.
Synchronous burst read mode is not supported with TTL level inputs.
6.
Applies only to subsequent synchronous reads.
Table 23: AC Read Specifications - (Sheet 3 of 3)
Num
Symbol
Parameter
Min
Max
Unit
Notes
Figure 17: Asynchronous Single-Word Read (ADV# Low)
R5
R7
R6
R17
R15
R9
R4
R8
R3
R1
R2
R1
Address [A]
ADV#
CE# [E}
OE# [G]
WAIT [T]
Data [D/Q]
RST# [P]



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