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RB520CS30L Datasheet(PDF) 3 Page - NXP Semiconductors |
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RB520CS30L Datasheet(HTML) 3 Page - NXP Semiconductors |
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3 / 14 page ![]() RB520CS30L All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved. Product data sheet Rev. 1 — 10 March 2011 3 of 14 NXP Semiconductors RB520CS30L 100 mA low VF MEGA Schottky barrier rectifier [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [2] Tj =25 °C prior to surge. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [4] Reflow soldering is the only recommended soldering method. [5] Device mounted on a ceramic PCB, Al2O3, standard footprint. 6. Thermal characteristics [1] For Schottky barrier diodes thermal runaway has to be considered, as in some applications the reverse power losses PR are a significant part of the total power losses. [2] Reflow soldering is the only recommended soldering method. [3] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [4] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for cathode 1 cm2. [5] Device mounted on a ceramic PCB, Al2O3, standard footprint. [6] Soldering point of cathode tab. Tj junction temperature - 150 °C Tamb ambient temperature −65 +150 °C Tstg storage temperature −65 +150 °C Table 5. Limiting values …continued In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Parameter Conditions Min Max Unit Table 6. Thermal characteristics Symbol Parameter Conditions Min Typ Max Unit Rth(j-a) thermal resistance from junction to ambient in free air [1][2] [3] - - 395 K/W [4] - - 220 K/W [5] - - 145 K/W Rth(j-sp) thermal resistance from junction to solder point [6] --70 K/W |
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