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MDD312 Datasheet(PDF) 1 Page - IXYS Corporation

Part # MDD312
Description  High Power Diode Modules
PDF  4 Pages
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Manufacturer  IXYS [IXYS Corporation]
Direct Link  http://www.ixys.com
Logo IXYS - IXYS Corporation

MDD312 Datasheet(HTML) 1 Page - IXYS Corporation

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© 2013 IXYS All rights reserved
1 - 4
20130813g
MDD 312
IXYS reserves the right to change limits, test conditions and dimensions.
I
FRMS =
2x 520 A
I
FAVM
=
2x 310 A
V
RRM = 1200-2200 V
High Power
Diode Modules
Features
• International standard package
• Direct Copper Bonded Al
2O3 ceramic
with copper base plate
• Planar passivated chips
• Isolation voltage 3600 V~
• UL registered
Applications
• Supplies for DC power equipment
• DC supply for PWM inverter
• Field supply for DC motors
• Battery DC power supplies
Advantages
• Simple mounting
• Improved temperature & power cycling
• Reduced protection circuits
Symbol
Conditions
Maximum Ratings
I
FRMS
I
FAVM
T
VJ = TVJM
T
C = 25°C
180° sine
T
C = 100°C
520
310
A
A
I
FSM
T
VJ = 45°C;
t = 10 ms
(50 Hz)
V
R = 0
t = 8.3 ms (60 Hz)
10500
11200
A
A
T
VJ = TVJM;
t = 10 ms
(50 Hz)
V
R = 0
t = 8.3 ms (60 Hz)
9200
9800
A
A
I2t
T
VJ = 45°C;
t = 10 ms
(50 Hz)
V
R = 0
t = 8.3 ms (60 Hz)
551 000
527 000
A2s
A2s
T
VJ = TVJM;
t = 10 ms
(50 Hz)
V
R = 0
t = 8.3 ms (60 Hz)
423 000
403 000
A2s
A2s
T
VJ
T
VJM
T
stg
-40...+150
150
-40...+125
°C
°C
°C
V
ISOL
50/60 Hz, RMS
t = 1 min
I
ISOL < 1 mA
t = 1 s
3000
3600
V~
V~
M
d
Mounting torque (M6)
Terminal connection torque (M8)
4.5 - 7
11-13
Nm
Nm
Weight
Typical including screws
750
g
3
1
2
V
RSM
V
RRM
Type
V
V
1300
1200
MDD 312-12N1
1500
1400
MDD 312-14N1
1700
1600
MDD 312-16N1
1900
1800
MDD 312-18N1
2100
2000
MDD 312-20N1
2300
2200
MDD 312-22N1
Symbol
Conditions
Characteristics Values
I
RRM
V
R = VRRM
T
VJ = TVJM
30
mA
V
F
I
F = 600 A;
T
VJ = 25°C
1.32
V
V
T0
r
t
For power-loss calculations only
T
VJ = TVJM
0.8
0.6
V
m
W
R
thJC
R
thJK
per diode; DC current
per module
other values
per diode; DC current
see MCC 255
per module
0.12
0.06
0.16
0.08
K/W
K/W
K/W
K/W
Q
S
I
RM
I
F = 400 A; -di/dt = 50 A/µs; TVJ = 125°C
700
260
µC
A
d
S
d
A
a
Creeping distance on surface
Creepage distance in air
Maximum allowable acceleration
12.7
9.6
50
mm
mm
m/s2
Data according to IEC 60747 and refer to a single diode unless otherwise stated.
E72873


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