IXTP64N055T datasheet(1/5 Pages) IXYS

Part #	IXTP64N055T

Description	TrenchMV Power MOSFET N-Channel EngancementMode Avalanche Rated

PDF	5 Pages

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Manufacturer	IXYS [IXYS Corporation]

Direct Link	http://www.ixys.com

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1 / 5 page

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Test Conditions

Maximum Ratings

V

DSS

T

J

= 25

°C to 175°C55

V

DGR

T

J

= 25

°C to 175°C; R

GS = 1 MΩ

55

V

GSM

Transient

± 20

V

I

D25

T

C = 25°C64

A

I

L

Package Current Limit, RMS

TO-252

25

A

I

DM

T

C = 25°C, pulse width limited by TJM

170

A

I

AR

T

C = 25°C10

A

E

AS

T

C = 25°C

250

mJ

dv/dt

I

S

≤ I

DM, di/dt ≤ 100 A/μs, VDD ≤ VDSS

3

V/ns

T

J

≤ 175°C, R

G = 18 Ω

P

D

T

C = 25°C

130

W

T

J

-55 ... +175

°C

T

JM

175

°C

T

stg

-55 ... +175

°C

T

L

1.6 mm (0.062 in.) from case for 10 s

300

°C

T

SOLD

Plastic body for 10 seconds

260

°C

M

d

Mounting torque (TO-220)

1.13 / 10 Nm/lb.in.

Weight

TO-220

3

g

TO-252

0.35

g

Symbol

Test Conditions

Characteristic Values

(T

J = 25°C unless otherwise specified)

Min.

Typ.

Max.

BV

DSS

V

GS

= 0 V, I

D = 250 μA55

V

GS(th)

V

DS = VGS, ID = 25 μA

2.0

4.0

V

I

GSS

V

GS = ± 20 V, VDS = 0 V

± 100

nA

I

DSS

V

DS = VDSS

1

μA

V

GS = 0 V

T

J = 150°C

100

μA

R

DS(on)

V

GS

= 10 V, I

D = 0.5 ID25, Notes 1, 2

13

m

Ω

TrenchMVTM

Power MOSFET

Preliminary Technical Information

N-Channel Enhancement Mode

Avalanche Rated

IXTP64N055T

IXTY64N055T

V

DSS

=55

V

I

D25

=64

A

R

DS(on) ≤

≤≤≤≤

13 m

Ω

DS99498 (11/06)

TO-220 (IXTP)

D (TAB)

G = Gate

D = Drain

S = Source

TAB = Drain

TO-252 (IXTY)

D (TAB)

S

G

D S

G

Features

Ultra-low On Resistance

Unclamped Inductive Switching (UIS)

rated

Low package inductance

- easy to drive and to protect

175

°C Operating Temperature

Advantages

Easy to mount

Space savings

High power density

Applications

Automotive

- Motor Drives

- High Side Switch

- 12V Battery

- ABS Systems

DC/DC Converters and Off-line UPS

Primary- Side Switch

High Current Switching

Applications

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