RJF0605DPD datasheet(4/8 Pages) RENESAS

4 / 8 page

RJF0605DPD

Target Specifications

R07DS0714EJ0100 Rev.1.00

Page 4 of 7

Apr 17, 2012

–50 –25

75 100

150

125

Pulse Test

10 V

VGS = 4 V

ID = 10 A

2 A

5 A

100

0.1

100

Tc = –40°C

150°C

VDS = 10 V

Pulse Test

25°C

0.1

100

1000

100

di / dt = 50 A /

μs

VGS = 0, Ta = 25°C

010

10000

3000

1000

300

100

0.2

0.4

0.6

0.8

1.0

VGS = 5 V

100

0.1

Pulse Test

td(off)

td(on)

0 V

VGS = 10 V, VDD = 30 V

PW = 300

μs, duty ≤ 1 %

Coss

VGS = 0

f = 1 MHz

Case Temperature

Tc (°C)

Static Drain to Source on State Resistance

vs. Temperature

Forward Transfer Admittance vs.

Drain Current

Drain Current ID (A)

Reverse Drain Current

IDR (A)

Body-Drain Diode Reverse

Recovery Time

Drain to Source Voltage VDS (V)

Typical Capacitance vs.

Drain to Source Voltage

Source to Drain Voltage VSD (V)

Reverse Drain Current vs.

Source to Drain Voltage

Drain Current

ID (A)

Switching Characteristics

RJF0605DPD Datasheet(PDF) 4 Page - Renesas Technology Corp

RJF0605DPD Datasheet(HTML) 4 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL