RJF0605DPD datasheet(2/8 Pages) RENESAS

2 / 8 page

RJF0605DPD

Target Specifications

R07DS0714EJ0100 Rev.1.00

Page 2 of 7

Apr 17, 2012

Typical Operation Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

VIH

3.5

—

Input voltage

VIL

—

1.2

IIH1

—

100

A

Vi = 8 V, VDS = 0

IIH2

—

A

Vi = 3.5 V, VDS = 0

Input current

(Gate non shut down)

IIL

—

A

Vi = 1.2 V, VDS = 0

IIH(sd)1

—

0.8

—

Vi = 8 V, VDS = 0

Input current

(Gate shut down)

IIH(sd)2

—

0.35

—

Vi = 3.5 V, VDS = 0

Shut down temperature

Tsd

—

175

—

C

Channel temperature

Gate operation voltage

Vop

3.5

—

Drain current

(Current limitation value)

ID limt

—

VGS = 5 V, VDS = 10 V

Note 4

Note:

4. Pulse test

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Conditions

ID1

—

VGS = 3.5 V, VDS = 10 V

Note 5

ID2

—

VGS = 1.2 V, VDS = 10 V

Drain current

ID3

—

VGS = 5 V, VDS = 10 V

Note 5

Drain to source breakdown

voltage

V(BR)DSS

—

ID = 10 mA, VGS = 0

V(BR)GSS

—

IG = 800 A, VDS = 0

Gate to source breakdown

voltage

V(BR)GSS

–2.5

—

IG = –100 A, VDS = 0

IGSS1

—

100

A

VGS = 8 V, VDS = 0

IGSS2

—

A

VGS = 3.5 V, VDS = 0

IGSS3

—

A

VGS = 1.2 V, VDS = 0

Gate to source leak current

IGSS4

—

–100

A

VGS = –2.4 V, VDS = 0

IGS(OP)1

—

0.8

—

VGS = 8 V, VDS = 0

Input current (shut down)

IGS(OP)2

—

0.35

—

VGS = 3.5 V, VDS = 0

Zero gate voltage drain current

IDSS

—

A

VDS = 32 V, VGS = 0

Gate to source cutoff voltage

VGS(off)

1.1

—

2.1

VDS = 10 V, ID = 1 mA

Forward transfer admittance

|yfs|

—

ID = 10 A, VDS = 10 V

Note 5

RDS(on)

—



ID = 10 A, VGS = 4 V

Note 5

Static drain to source on state

resistance

RDS(on)

—



ID = 10 A, VGS = 10 V

Note 5

Output capacitance

Coss

—

450

—

VDS = 10 V, VGS = 0, f = 1MHz

Turn-on delay time

td(on)

—

s

Rise time

—

s

Turn-off delay time

td(off)

—

4.4

—

s

Fall time

—

7.7

—

s

VGS = 10 V, ID= 10 A, RL = 3 

Body-drain diode forward

voltage

VDF

—

0.9

—

IF = 20 A, VGS = 0

Body-drain diode reverse

recovery time

trr

—

85.3

—

IF = 20 A, VGS = 0

diF/dt = 50 A/s

tos1

—

0.3

—

VGS = 5 V, VDD = 16 V

Over load shut down

operation time

Note 6

tos2

—

0.2

—

VGS = 5 V, VDD = 24 V

Notes: 5. Pulse test

6. Including the junction temperature rise of the over loaded condition.

RJF0605DPD Datasheet(PDF) 2 Page - Renesas Technology Corp

RJF0605DPD Datasheet(HTML) 2 Page - Renesas Technology Corp

Html Pages

1 2 3 4 5 6 7 8

Datasheet Download

Link URL