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SST39VF3201B Datasheet(PDF) 13 Page - Microchip Technology

Part # SST39VF3201B
Description  32 Mbit (x16) Multi-Purpose Flash Plus
PDF  29 Pages
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Manufacturer  MICROCHIP [Microchip Technology]
Direct Link  http://www.microchip.com
Logo MICROCHIP - Microchip Technology

SST39VF3201B Datasheet(HTML) 13 Page - Microchip Technology

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Data Sheet
32 Mbit Multi-Purpose Flash Plus
SST39VF3201B / SST39VF3202B
13
©2009 Silicon Storage Technology, Inc.
S71384-01-000
1/09
AC CHARACTERISTICS
TABLE 14: Read Cycle Timing Parameters VDD = 2.7-3.6V
Symbol
Parameter
Min
Max
Units
TRC
Read Cycle Time
70
ns
TCE
Chip Enable Access Time
70
ns
TAA
Address Access Time
70
ns
TOE
Output Enable Access Time
35
ns
TCLZ1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
CE# Low to Active Output
0
ns
TOLZ1
OE# Low to Active Output
0
ns
TCHZ1
CE# High to High-Z Output
16
ns
TOHZ1
OE# High to High-Z Output
16
ns
TOH1
Output Hold from Address Change
0
ns
TRP1
RST# Pulse Width
500
ns
TRHR1
RST# High before Read
50
ns
TRY1,2
2. This parameter applies to Sector-Erase, Block-Erase, and Program operations.
This parameter does not apply to Chip-Erase operations.
RST# Pin Low to Read Mode
20
µs
T14.0 1384
TABLE 15: Program/Erase Cycle Timing Parameters
Symbol
Parameter
Min
Max
Units
TBP
Word-Program Time
10
µs
TAS
Address Setup Time
0
ns
TAH
Address Hold Time
30
ns
TCS
WE# and CE# Setup Time
0
ns
TCH
WE# and CE# Hold Time
0
ns
TOES
OE# High Setup Time
0
ns
TOEH
OE# High Hold Time
10
ns
TCP
CE# Pulse Width
40
ns
TWP
WE# Pulse Width
40
ns
TWPH1
1. This parameter is measured only for initial qualification and after a design or process change that could affect this parameter.
WE# Pulse Width High
30
ns
TCPH1
CE# Pulse Width High
30
ns
TDS
Data Setup Time
30
ns
TDH1
Data Hold Time
0
ns
TIDA1
Software ID Access and Exit Time
150
ns
TSE
Sector-Erase
25
ms
TBE
Block-Erase
25
ms
TSCE
Chip-Erase
50
ms
T15.0 1384



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