TPCP8404 datasheet(1/11 Pages) TOSHIBA

Part #	TPCP8404

Description	TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MO/U-MOS)

PDF	11 Pages

Scroll/Zoom	100%

Manufacturer	TOSHIBA [Toshiba Semiconductor]

Direct Link	http://www.semicon.toshiba.co.jp/eng

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1 / 11 page

TPCP8404

2010-02-01

1

TOSHIBA Field Effect Transistor Silicon P, N Channel MOS Type (U-MOⅤ/U-MOSⅣ)

TPCP8404

Portable Equipment Applications

Motor Drive Applications

• Low drain-source ON-resistance : P Channel RDS (ON) = 38 mΩ(typ.)

(VGS=

−10V)

N Channel RDS (ON) = 38 mΩ(typ.)

（

VGS=10V)

• High forward transfer admittance : P Channel |Yfs| = 7.3 S (typ.)

N Channel |Yfs| = 8 S (typ.)

• Low leakage current : P Channel IDSS = −10 μA (max) (VDS = −30 V)

N Channel IDSS = 10 μA (max) (VDS = 30 V)

• Enhancement mode

: P Channel Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA)

N Channel Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)

Absolute Maximum Ratings (Ta = 25°C)

Characteristics

Symbol

Rating

Unit

Drain-source voltage

VDSS

−30

30

V

Drain-gate voltage (RGS = 20 kΩ)

VDGR

−30

30

V

Gate-source voltage

VGSS

±20

V

DC

(Note 1)

ID

−4

4

Drain

current

Pulse

(Note 1)

IDP

−16

16

A

Single-device operation

(Note 3a)

PD (1)

1.48

Drain power

dissipation

(t

= 5 s)

(Note 2a)

Single-device value at

dual operation (Note 3b)

PD (2)

1.23

Single-device operation

(Note 3a)

PD (1)

0.58

Drain power

dissipation

(t

= 5 s)

(Note 2b)

Single-device value at

dual operation (Note 3b)

PD (2)

0.36

W

Single pulse avalanche energy

(Note 4)

EAS

2.6

mJ

Avalanche current

IAR

−2

2

A

Repetitive avalanche energy

Single-device value at dual operation

(Note 2a, 3b, 5)

EAR

0.009

mJ

Channel temperature

Tch

150

°C

Storage temperature range

Tstg

−55 to 150

°C

Note: For Notes 1 to 5, refer to the next page.

Using continuously under heavy loads (e.g. the application of high

temperature/current/voltage and the significant change in

temperature, etc.) may cause this product to decrease in the

reliability significantly even if the operating conditions (i.e.

operating temperature/current/voltage, etc.) are within the

absolute maximum ratings. Please design the appropriate

reliability upon reviewing the Toshiba Semiconductor Reliability

Handbook (“Handling Precautions”/“Derating Concept and

Methods”) and individual reliability data (i.e. reliability test report

and estimated failure rate, etc).

This transistor is an electrostatic-sensitive device. Handle with caution.

Unit: mm

JEDEC

⎯

JEITA

⎯

TOSHIBA

2-3V1G

Weight: 0.017 g (typ.)

Circuit Configuration

Marking (Note 6)

8

7

6

5

1

2

3

4

8404

1

2

3

4

8

7

6

5

Lot No.

5．Drain2

6．Drain2

7．Drain1

8．Drain1

1．Source1

2．Gate1

3．Source2

4．Gate2

0.33±0.05

0.28+0.1

-0.11

1.12+0.13

-0.12

0.475

0.65

A

0.05 M

2.9±0.1

4

1

5

8

0.8±0.05

0.17±0.02

B

0.05 M

A

S

0.025

S

1.12+0.13

-0.12

0.28+0.1

-0.11

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