CC2510F8RHHT datasheet(81/244 Pages) TI

81 / 244 page

CC2510Fx / CC2511Fx

SWRS055G

Page 81 of 236

The cause of the last reset can read from the

that a BOD reset will be read as a POR reset.

UNREGULATED

1.8V REGULATED

POR RESET ASSERT FALLING VDD

BOD RESET ASSERT

POR RESET DEASSERT RISING VDD

VOLT

POR OUTPUT

BOD RESET

POR RESET

Figure 19: Power-On-Reset and Brown Out Detector Operation

12.3 Flash Controller

The

CC2510Fx/CC2511Fx contains 8, 16 or 32 KB

flash memory for storage of program code.

The flash memory is programmable from the

user software and through the debug interface.

See Table 27 on Page 31 for flash memory

size options.

The Flash Controller handles writing to the

embedded flash memory and erasing of the

same memory. The embedded flash memory

consists of 8, 16, or 32 pages (each page is

1024 bytes) depending on the total flash size.

The

Flash

Controller

has

the

following

features:

• 16-bit word programmable

• Page erase

• Lock bits for write-protection and code

security

• Flash page erase time: 20 ms

• Flash chip erase time: 200 ms

• Flash write time (2 bytes): 20 µs

• Auto power-down during low-frequency

CPU clock read access (divided clock

source, CLKCON.CLKSPD)

12.3.1

Flash Memory Organization

The flash memory is divided into 8, 16, or 32

flash pages consisting of 1 KB each. A flash

page is the smallest erasable unit in the

memory, while a 16-bit word is the smallest

writable unit that may be addressed through

the Flash Controller.

When performing write operations, the flash

memory is word-addressable using a 14-bit

address

written

the

address

registers

FADDRH:FADDRL

When performing page erase operations, the

flash memory page to be erased is addressed

through the register bits FADDRH[5:1].

Note the difference in addressing the flash

memory; when accessed by the CPU to read

code or data, the flash memory is byte-

addressable. When accessed by the Flash

Controller,

the

flash

memory

word-

addressable, where a word consists of 16 bits.

The next sections describe the procedures for

flash write and flash page erase in detail.

12.3.2

Flash Write

Data is written to the flash memory by using a

program command initiated by writing a 1 to

FCTL.WRITE.

Flash write operations can

program any number of words in the flash

memory, single words or block of words in

sequence starting at the address set by

FADDRH:FADDRL

. A bit in a word can be

changed from 1 to 0, but not from 0 - 1 (writing

a 1 to a bit that is 0 will be ignored). The only

way to change a 0 to a 1 is by doing a page

erase

chip

erase

through

the

debug

interface, as the erased bits are set to 1.

A write operation is performed using one out of

two methods;

• Through DMA transfer

• Through CPU SFR access

CC2511F8 - Not Recommended for New Designs

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