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Motorola TMOS Power MOSFET Transistor Device Data

Designer's™ Data Sheet

Power Field Effect Transistor

P–Channel Enhancement–Mode Silicon Gate

This TMOS Power FET is designed for medium voltage, high

speed power switching applications such as switching regulators,

converters, solenoid and relay drivers.

• Silicon Gate for Fast Switching Speeds — Switching Times

Specified at 100

°C

• Designer’s Data — IDSS, VDS(on), VGS(th) and SOA Specified

at Elevated Temperature

• Rugged — SOA is Power Dissipation Limited

• Source–to–Drain Diode Characterized for Use With Inductive Loads

Rating

Symbol

Value

Unit

Drain–Source Voltage

VDSS

100

Vdc

Drain–Gate Voltage (RGS = 1.0 MΩ)

VDGR

100

Vdc

Gate–Source Voltage — Continuous

VGS

VGSM

±20

±40

Vdc

Vpk

Drain Current — Continuous

ID

IDM

12

28

Adc

Total Power Dissipation

Derate above 25

°C

PD

75

0.6

Watts

W/

°C

Operating and Storage Temperature Range

TJ, Tstg

– 65 to 150

°C

THERMAL CHARACTERISTICS

Thermal Resistance — Junction to Case

°

R

θJC

R

θJA

1.67

62.5

°C/W

Maximum Lead Temperature for Soldering Purposes, 1/8

″ from case for 10 seconds

TL

260

°C

Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit

curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.

Designer’s is a trademark of Motorola, Inc.

REV 1

Order this document

by MTP12P10/D

MOTOROLA

SEMICONDUCTOR TECHNICAL DATA

MTP12P10

TMOS POWER FET

12 AMPERES

100 VOLTS

RDS(on) = 0.3 OHM

®

D

S

G

CASE 221A–06, Style 5

TO–220AB

© Motorola, Inc. 1996