MTP12P10

3

Motorola TMOS Power MOSFET Transistor Device Data

TYPICAL ELECTRICAL CHARACTERISTICS

–VDS, DRAIN–TO–SOURCE VOLTAGE (VOLTS)

Figure 1. On–Region Characteristics

TJ, JUNCTION TEMPERATURE (°C)

Figure 2. Gate–Threshold Voltage Variation

With Temperature

VGS, GATE–TO–SOURCE VOLTAGE (VOLTS)

Figure 3. Transfer Characteristics

TJ, JUNCTION TEMPERATURE (°C)

Figure 4. Normalized Breakdown Voltage

versus Temperature

ID, DRAIN CURRENT (AMPS)

Figure 5. On–Resistance versus Drain Current

TJ, JUNCTION TEMPERATURE (°C)

Figure 6. On–Resistance Variation

With Temperature

20

18

16

14

12

10

8

6

4

2

0

10

9

8

7

6

5

4

3

2

1

0

1.2

1.1

1

0.9

0.8

–50

–25

0

25

50

75

100

125

150

20

16

12

8

4

0

20

16

12

8

4

0

2

1.6

1.2

0.8

0.4

0

–50

–75

0

25

50

75

100

125

150

0.5

0.4

0.3

0.2

0.1

0

40

36

32

28

24

20

16

12

8

4

0

1.8

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2

0

–50

–25

0

25

50

75

100

125

150

TJ = 25°C

VGS = –20 V

8 V

10 V

7 V

6 V

5 V

VDS = VGS

ID = 1 mA

VDS = 20 V

TJ = –55°C

25

°C

100

°C

VGS = 0

ID = 0.25 mA

TJ = 100°C

25

°C

–55

°C

VGS = 15 V

VGS = 10 V

ID = 6 A