DocID023544 Rev 4

5/16

STP8N80K5, STU8N80K5

Electrical characteristics

The built-in back-to-back Zener diodes have been specifically designed to enhance not only

the device’s ESD capability, but also to make them capable of safely absorbing any voltage

transients that may occasionally be applied from gate to source. In this respect, the Zener

voltage is appropriate to achieve efficient and cost-effective protection of device integrity.

The integrated Zener diodes thus eliminate the need for external components.

Table 6. Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

t

d(on)

Turn-on delay time

V

DD

= 400 V, I

D

= 3 A,

R

G

=4.7

Ω, V

GS

=10 V

(see Figure 20)

-12-

ns

t

r

Rise time

-

14

-

ns

t

d(off)

Turn-off delay time

-

32

-

ns

t

f

Fall time

-

20

-

ns

Table 7. Source drain diode

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

I

SD

Source-drain current

-

6

A

I

SDM

Source-drain current (pulsed)

24

A

V

SD

(1)

1.

Pulsed: pulse duration = 300μs, duty cycle 1.5%

Forward on voltage

I

SD

= 6 A, V

GS

=0

-

1.5

V

t

rr

Reverse recovery time

I

SD

= 6 A, V

DD

= 60 V

di/dt = 100 A/μs,

(see Figure 19)

-

300

ns

Q

rr

Reverse recovery charge

-

3

μC

I

RRM

Reverse recovery current

-

20

A

t

rr

Reverse recovery time

I

SD

= 6 A,V

DD

= 60 V

di/dt=100 A/μs,

T

j

=150 °C

(see Figure 19)

-

415

ns

Q

rr

Reverse recovery charge

-

3.8

μC

I

RRM

Reverse recovery current

-

18

A

Table 8. Gate-source Zener diode

Symbol

Parameter

Test conditions

Min

Typ.

Max.

Unit

V

(BR)GSO

Gate-source breakdown voltage

I

GS

= ± 1mA, I

D

=0

30

-

-

V