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STL6N2VH5 Datasheet(PDF) 1 Page - STMicroelectronics |
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STL6N2VH5 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 12 page ![]() This is preliminary information on a new product now in development or undergoing evaluation. Details are subject to change without notice. January 2013 Doc ID 023150 Rev 2 1/12 12 STL6N2VH5 N-channel 20 V, 0.025 Ω typ., 6 A STripFET™ V Power MOSFET in PowerFLAT™ 2x2 package Datasheet −preliminary data Features ■ Very low switching gate charge ■ Very low thermal resistance ■ Conduction losses reduced ■ Switching losses reduced ■ 2.5 V gate drive ■ Very low threshold device Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using STMicroelectronics’ STripFET™V technology. The device has been optimized to achieve very low on-state resistance, contributing to an FOM that is among the best in its class. Figure 1. Internal schematic diagram Order code VDSS RDS(on) max. ID PTOT STL6N2VH5 20 V 0.03 Ω (VGS=4.5 V) 0.04 Ω (VGS=2.5 V) 6 A 2.4 W PowerFLAT™ 2x2 1 2 3 6 5 4 1 2 3 1(D) 2(D) 3(G) 6(D) 5(D) 4(S) D S AM11269v1 Table 1. Device summary Order code Marking Package Packaging STL6N2VH5 STD1 PowerFLAT™ 2x2 Tape and reel www.st.com |
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