STL6N2VH5 datasheet(4/12 Pages) STMICROELECTRONICS

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Electrical characteristics

STL6N2VH5

4/12

Doc ID 023150 Rev 2

Electrical characteristics

(TCASE = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

voltage

ID = 250 µA, VGS = 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 20 V,

VDS = 20 V, TJ = 125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ±8 V

100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

0.7

RDS(on)

Static drain-source on-

resistance

VGS = 4.5 V, ID = 3 A

VGS =2.5 V, ID = 3 A

0.025

0.031

0.03

0.04

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 16 V, f=1 MHz,

VGS=0

550

110

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 10 V, ID = 6 A

VGS = 4.5 V

(see Figure 3)

TBD

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD= 10 V, ID = 3 A,

RG = 4.7 Ω, VGS = 4.5 V

(see Figure 2)

TBD

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