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LMH6554LEENOPB Datasheet(PDF) 3 Page - National Semiconductor (TI)

[Old version datasheet] Texas Instruments acquired National semiconductor.
Part # LMH6554LEENOPB
Description  LMH6554 2.8 GHz Ultra Linear Fully Differential Amplifier
PDF  24 Pages
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Manufacturer  NSC [National Semiconductor (TI)]
Direct Link  http://www.national.com
Logo NSC - National Semiconductor (TI)

LMH6554LEENOPB Datasheet(HTML) 3 Page - National Semiconductor (TI)

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LMH6554
www.ti.com
SNOSB30O – OCTOBER 2008 – REVISED MARCH 2013
+5V Electrical Characteristics
(1)
Unless otherwise specified, all limits are ensured for TA = +25°C, AV = +2, V
+ = +2.5V, V− = −2.5V, R
L = 200Ω, VCM = (V
++V-
)/2, RF = 200Ω, for single-ended in, differential out. Boldface Limits apply at the temperature extremes.
Symbol
Parameter
Conditions
Min (2)
Typ (3)
Max (2)
Units
AC Performance (Differential)
AV = 1, VOUT = 0.2 VPP
2800
SSBW
Small Signal
−3 dB Bandwidth (2)
AV = 2, VOUT = 0.2 VPP
2500
MHz
AV = 4, VOUT = 0.2 VPP
1600
AV = 1, VOUT = 2 VPP
1800
LSBW
Large Signal Bandwidth
AV = 2, VOUT = 2 VPP
1500
MHz
AV = 2, VOUT = 1.5 VPP
1900
0.1 dBBW
0.1 dB Bandwidth
AV = 2, VOUT = 0.2 VPP, RF = 250Ω
830
MHz
SR
Slew Rate
4V Step
6200
V/
μs
2V Step, 10–90%
290
tr/tf
Rise/Fall Time
ps
0.4V Step, 10–90%
150
Ts_0.1
0.1% Settling Time
2V Step, RL = 200Ω
4
ns
Overdrive Recovery Time
VIN = 2V, AV = 5 V/V
6
ns
Distortion and Noise Response
VOUT = 2 VPP, f = 20 MHz
-102
VOUT = 2 VPP, f = 75 MHz
-96
HD2
2nd Harmonic Distortion
VOUT = 2 VPP, f = 125 MHz
-87
dBc
VOUT = 2 VPP, f = 250 MHz
−79
VOUT = 1.5 VPP, f = 250 MHz
−81
VOUT = 2 VPP, f = 20 MHz
−110
VOUT = 2 VPP, f = 75 MHz
−97
HD3
3rd Harmonic Distortion
VOUT = 2 VPP, f = 125 MHz
−87
dBc
VOUT = 2 VPP, f = 250 MHz
−70
VOUT = 1.5 VPP, f = 250 MHz
−75
OIP3
Output 3rd-Order Intercept
f = 150 MHz, VOUT = 2VPP Composite
46.5
dBm
IMD3
Two-Tone Intermodulation
f = 150 MHz, VOUT = 2VPP Composite
−97
dBc
en
Input Voltage Noise Density
f = 10 MHz
0.9
nV/
√Hz
in+
Input Noise Current
f = 10 MHz
11
pA/
√Hz
in-
Input Noise Current
f = 10 MHz
11
pA/
√Hz
NF
Noise Figure (4)
50
Ω System, AV = 7.3, 100 MHz
7.7
dB
Input Characteristics
IBI+ / IBI-
−75
−29
20
µA
TCIbi
Input Bias Current Temperature Drift
8
µA/°C
VCM = 0V, VID = 0V,
IBID
Input Bias Current (5)
−10
1
10
μA
IBOFFSET = (IB-- IB+)/2
Input Bias Current Diff Offset
TCIbo
0.006
µA/°C
Temperature Drift (3)
CMRR
Common Mode Rejection Ratio
DC, VCM = 0V, VID = 0V
83
dB
(1)
Electrical Table values apply only for factory testing conditions at the temperature indicated. Factory testing conditions result in very
limited self-heating of the device such that TJ = TA. No specification of parametric performance is indicated in the electrical tables under
conditions of internal self-heating where TJ > TA. See Application Information for information on temperature de-rating of this device."
Min/Max ratings are based on product characterization and simulation. Individual parameters are tested as noted.
(2)
Limits are 100% production tested at 25°C. Limits over the operating temperature range are ensured through correlation using Statistical
Quality Control (SQC) methods.
(3)
Typical values represent the most likely parametric norm as determined at the time of characterization. Actual typical values may vary
over time and will also depend on the application and configuration. The typical values are not tested and are not ensured on shipped
production material.
(4)
For test schematic, refer to Figure 35.
(5)
IBI is referred to a differential output offset voltage by the following relationship: VOD(OFFSET) = IBI*2RF.
Copyright © 2008–2013, Texas Instruments Incorporated
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