GP1600FSM12

Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.

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KEY PARAMETERS

V

CES

1200V

V

CE(sat)

(typ)

2.7V

I

C

(max) 1600A

I

C(PK)

(max) 3200A

Fig. 2 Electrical connections - (not to scale)

Fig.1 Single switch circuit diagram

Outline type code: F

(See package details for further information)

C1

E1

C2

E2

G

Aux E

Aux C

C2

C1

Aux C

G

Aux E

E1

E2

External connection

External connection

GP1600FSM12

Single Switch IGBT Module

Advance Information

DS5451-1.2 October 2001

FEATURES

s

High Thermal Cycling Capability

s

1600A Per Module

s

Non Punch Through Silicon

s

Isolated MMC Base with AlN Substrates

APPLICATIONS

s

High Reliability Inverters

s

Motor Controllers

s

Traction Drives

s

Resonant Converters

The Powerline range of high power modules includes half

bridge, chopper, dual and single switch configurations covering

voltages from 600V to 3300V and currents up to 2400A.

The GP1600FSM12 is a singlel switch 1200V, n channel

enhancement mode, insulated gate bipolar transistor (IGBT)

module. The IGBT has a wide reverse bias safe operating area

(RBSOA) ensuring reliability in demanding applications.

This

device is optimised for traction drives and other applications

requiring high thermal cycling capability or very high reliability.

The module incorporates an electrically isolated base plate

and low inductance construction enabling circuit designers to

optimise circuit layouts and utilise earthed heat sinks for safety.

ORDERING INFORMATION

Order As:

GP1600FSM12

Note: When ordering, please use the complete part number.