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GP1600FSM12 Datasheet(PDF) 7 Page - Dynex Semiconductor

Part # GP1600FSM12
Description  Single Switch IGBT Module Advance Information
PDF  10 Pages
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Manufacturer  DYNEX [Dynex Semiconductor]
Direct Link  http://www.dynexsemi.com
Logo DYNEX - Dynex Semiconductor

GP1600FSM12 Datasheet(HTML) 7 Page - Dynex Semiconductor

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GP1600FSM12
Caution: This device is sensitive to electrostatic discharge. Users should follow ESD handling procedures.
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Fig.13 Diode typical forward characteristics
Fig.14 Reverse bias safe operating area
Fig.15 Forward bias safe operating area
Fig.16 Transient thermal impedance
0
400
800
1200
1600
2000
2400
2800
3200
0
0.5
1
1.5
2
2.5
3
3.5
Forward voltage, VF - (V)
Tj = 125˚C
Tj = 25˚C
0
200
400
600
800
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
3200
3400
3600
0
200
400
600
800
1000
1200
Collector-emitter voltage, VCE - (V)
Conditions:
VGE = ±15V
Rg = 3.3Ω
Tcase = 125˚C
1
10
100
1000
10000
1
10
100
1000
10000
Collector-emitter voltage, Vce - (V)
IC max. (single pulse)
I
C max.
DC
(continuous)
tp = 1ms
100
µs
50
µs
0.1
1
10
100
0.001
0.01
0.1
1
10
Pulse width, tp - (s)
Transistor
Diode



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