MA4SW424B-1

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Data Sheets contain information regarding a product M/A-COM Technology Solutions

is considering for development. Performance is based on target specifications, simulated results,

and/or prototype measurements. Commitment to develop is not guaranteed.

PRELIMINARY:

Data Sheets contain information regarding a product M/A-COM Technology

Solutions has under development. Performance is based on engineering tests. Specifications are

typical. Mechanical outline has been fixed. Engineering samples and/or test data may be available.

Commitment to produce in volume is not guaranteed.

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1

SP4T 24GHz PIN Diode Switch with Integrated Bias Network

Rev. V1

Features

♦Frequency of Operation: 24 +/- 2 GHz

♦Fully Integrated Bias Network

♦Low Power Consumption

+12mA for Insertion Loss, 0V for Isolation

♦The Device is Wire Bond Compensated at all RF

Ports for RF Matching

♦Rugged, Monolithic, Glass Encapsulated

Construction

♦RoHS Compliant

Absolute Maximum Ratings

1

1. Exceeding any of these limits may cause permanent

damage to the chip.

The MA4SW424B-1 is a SP4T switch with an

integrated bias network which utilizes M/A-COM

Technology

Solutions

(Heterolithic

Microwave Integrated Circuit) process, US Patent

5,268,310. This process allows the incorporation

of silicon pedestals that form series and/or shunt

diodes or vias by imbedding them in a low loss,

low dispersion glass. By using small spacing

between elements, this combination of silicon

and glass gives HMIC devices exceptional low

loss and high isolation performance with

exceptional repeatability through lower millimeter

frequencies. Five, 4.5 X 5.5 mil, RF bond pads

facilitate the use of low inductance ribbon bonds,

while gold backside metallization allows for

manual

or

automatic

chip

bonding

using

electrically conductive silver epoxy. Each RF

bond pad has an adjacent tuning pad. The user

can use bias and add the appropriate wire or

ribbon (inductance) to optimize the RF match and

performance for the particular frequency of

interest.

Description

Applications

The MA4SW424B-1 SP4T, switch is designed for

24

GHz

automotive

switching

applications.

Insertion loss is achieved with +12 mA @ +4 V and

isolation is achieved with 0V D.C. bias. The RF

bias network is integrated into the HMIC switch for

ease of use and space considerations

.

Parameter

Absolute Maximum

Forward Current

+40mA

Operating Temperature

-55°C to +125°C

Storage Temperature

-55°C to +150°C

Junction Temperature

+175°C

RF Incident Power @ +20mA

30 dBm

Gold bond pads are shown here in yellow.