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ACT8600 Datasheet(PDF) 17 Page - Active-Semi, Inc |
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ACT8600 Datasheet(HTML) 17 Page - Active-Semi, Inc |
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17 / 51 page ![]() ACT8600 Rev 3, 15-Nov-12 Copyright © 2012 Active-Semi, Inc. Innovative Power TM ActivePMU TM and ActivePathTM are trademarks of Active-Semi. I 2CTM is a trademark of NXP. - 17 - www.active-semi.com STEP-DOWN DC/DC ELECTRICAL CHARACTERISTICS (VVP1 = VVP2 = VVP3 = 3.6V, TA = 25°C, unless otherwise specified.) PARAMETER CONDITIONS MIN TYP MAX UNIT Operating Voltage Range 2.7 5.5 V UVLO_VP Threshold Input Voltage Rising 2.5 2.6 2.7 V UVLO_VP Hysteresis Input Voltage Falling 100 mV Standby Supply Current Regulator Enabled, VVSYS = 3.6V 68 95 µA Shutdown Current VVP = 5.5V, Regulator Disabled 0 1 µA Output Voltage Accuracy VOUT ≥ 1.2V, IOUT = 10mA -1.5% VNOM 1.5% V Line Regulation VVP = Max (VNOM1 + 1, 3.2V) to 5.5V 0.15 %/V Load Regulation IOUT = 10mA to IMAX2 0.0017 %/mA Power Good Threshold VOUT Rising 93 %VNOM Power Good Hysteresis VOUT Falling 2.5 %VNOM Switching Frequency VOUT ≥ 20% of VNOM 2.06 2.22 2.38 MHz VOUT = 0V 520 kHz Soft-Start Period VOUT = 3.3V 500 µs Minimum On-Time 75 90 ns REG1 Maximum Output Current 1.2 A Current Limit 1.70 2.00 2.75 A PMOS On-Resistance ISW1 = -100mA, VVSYS = 3.6V 0.150 Ω NMOS On-Resistance ISW1 = 100mA, VVSYS = 3.6V 0.120 Ω SW1 Leakage Current VVP1 = 5.5V, VSW1 = 0 or 5.5V 0 1 µA REG2 Maximum Output Current 1.2 A Current Limit 1.70 2.00 2.75 A PMOS On-Resistance ISW2 = -100mA, VVSYS = 3.6V 0.150 Ω NMOS On-Resistance ISW2 = 100mA, VVSYS = 3.6V 0.120 Ω SW2 Leakage Current VVP2 = 5.5V, VSW2 = 0 or 5.5V 0 1 µA REG3 Maximum Output Current 0.95 A Current Limit 1.10 1.45 1.85 A PMOS On-Resistance ISW3 = -100mA 0.150 Ω NMOS On-Resistance ISW3 = 100mA 0.120 Ω SW3 Leakage Current VVP3 = 5.5V, VSW3 = 0 or 5.5V 0 1 µA : VNOM refers to the nominal output voltage level for VOUT as defined by the Ordering Information section. 2 : IMAX Maximum Output Current. |
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