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ACT8600 Datasheet(PDF) 8 Page - Active-Semi, Inc |
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ACT8600 Datasheet(HTML) 8 Page - Active-Semi, Inc |
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8 / 51 page ![]() ACT8600 Rev 3, 15-Nov-12 Copyright © 2012 Active-Semi, Inc. Innovative Power TM ActivePMU TM and ActivePathTM are trademarks of Active-Semi. I 2CTM is a trademark of NXP. - 8 - www.active-semi.com ABSOLUTE MAXIMUM RATINGS PARAMETER VALUE UNIT VP1, VP2 to GP12 VP3 to GP3 -0.3 to + 6 V BAT, VSYS, INL, VBUS, 5VIN to GA -0.3 to + 6 V CHGIN to GA -0.3 to + 14 V SW1, OUT1 to GP12 -0.3 to (VVP1 + 0.3) V SW2, OUT2 to GP12 -0.3 to (VVP2 + 0.3) V SW3, OUT3 to GP3 -0.3 to (VVP3 + 0.3) V SW4, OUT4 to GP4 -0.3 to + 42 V nIRQ, nRSTO, nSTAT to GA -0.3 to + 6 V PWREN, SCL, SDA, CHGLEV, TH, ISET, REFBP to GA -0.3 to (VVSYS + 0.3) V OUT5, OUT6, OUT7, OUT8, OUT9, OUT10 to GA -0.3 to (VINL + 0.3) V GP12, GP3, GP4 to GA -0.3 to + 0.3 V Operating Ambient Temperature -40 to 85 °C Maximum Junction Temperature 125 °C Maximum Power Dissipation TQFN55-40 (Thermal Resistance=30°C/W) 3.2 W Storage Temperature -65 to 150 °C Lead Temperature (Soldering, 10 sec) 300 °C : Do not exceed these limits to prevent damage to the device. Exposure to absolute maximum rating conditions for long periods may affect device reliability. |
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