STP1N105K3 datasheet(3/18 Pages) STMICROELECTRONICS

3 / 18 page

STF1N105K3, STFW1N105K3, STP1N105K3

Electrical ratings

Doc ID 023509 Rev 2

3/18

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

TO-220FP

TO-3PF

TO-220

Drain source voltage

1050

Gate- source voltage

± 30

Drain current (continuous) at T

= 25 °C

1.4

(1)

Limited by maximum junction temperature.

1.4

Drain current (continuous) at T

= 100 °C

0.9

(1)

0.9

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

5.6

(1)

5.6

TOT

Total dissipation at T

= 25 °C

Max current during repetitive or single

pulse avalanche (pulse width limited by

jmax

)

1.2

Single pulse avalanche energy

(starting T

= 25 °C, I

IAR

, V

= 50 V)

130

ISO

Insulation withstand voltage (RMS) from

all three leads to external heat sink

(t = 1 s; TC = 25 °C)

2500

3500

dv/dt

(3)

≤ 1.4 A, di/dt ≤ 100 A/μs, V

= 80% V

(BR)DSS

, V

peak

≤ V

(BR)DSS.

Peak diode recovery voltage slope

V/ns

stg

Operating junction temperature

Storage temperature

- 55 to 150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

TO-220FP

TO-3PF

TO-220

Rthj-case

Thermal resistance junction-case max

6.25

2.08

°C/W

Rthj-amb

Thermal resistance junction-amb max

62.50

°C/W

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