Electrical characteristics

STF1N105K3, STFW1N105K3, STP1N105K3

4/18

Doc ID 023509 Rev 2

2

Electrical characteristics

(T

CASE

= 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V

(BR)DSS

Drain-source breakdown

voltage

I

D

= 1 mA, V

GS

= 0

1050

V

I

DSS

Zero gate voltage drain

current (V

GS

= 0)

V

DS

= 1050 V,

V

DS

= 1050 V, Tc=125 °C

1

50

μA

μA

I

GSS

Gate body leakage current

(V

DS

= 0)

V

GS

= ± 20 V

±50

μA

V

GS(th)

Gate threshold voltage

V

DS

= V

GS

, I

D

= 50 μA2

3

4.5

V

R

DS(on)

Static drain-source on-

resistance

V

GS

= 10 V, I

D

= 0.6 A

8

11

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

C

iss

Input capacitance

V

DS

=100 V, f=1 MHz, V

GS

=0

-

180

-

pF

C

oss

Output capacitance

15

pF

C

rss

Reverse transfer

capacitance

1pF

C

o(tr)

(1)

1.

Time related is defined as a constant equivalent capacitance giving the same charging time as C

oss

when

V

DS

increases from 0 to 80% V

DSS

Equivalent capacitance time

related

V

GS

= 0, V

DS

= 0 to 840 V

-11

-

pF

C

o(er)

(2)

2.

Energy related is defined as a constant equivalent capacitance giving the same stored energy as C

oss

when V

DS

increases from 0 to 80% V

DSS

Equivalent capacitance

energy related

-7

-

pF

R

G

Intrinsic gate resistance

f = 1 MHz open drain

-

18

-

Ω

Q

g

Q

gs

Q

gd

Total gate charge

Gate-source charge

Gate-drain charge

V

DD

= 840 V, I

D

= 1.2 A

V

GS

=10 V

(see Figure 18)

-

13

1.6

8

-

nC

nC

nC