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STP1N105K3 Datasheet(PDF) 5 Page - STMicroelectronics

Part # STP1N105K3
Description  N-channel 1050 V, 8 Ω typ., 1.4 A SuperMESH3™ Power MOSFET in TO-220FP, TO-3PF and TO-220 packages
PDF  18 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

STP1N105K3 Datasheet(HTML) 5 Page - STMicroelectronics

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STF1N105K3, STFW1N105K3, STP1N105K3
Electrical characteristics
Doc ID 023509 Rev 2
5/18
Table 6.
Switching times
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
t
d(off)
t
f
Turn-on delay time
Rise time
Turn-off delay time
Fall time
V
DD
= 525 V, I
D
= 0.6 A,
R
G
=4.7
Ω, V
GS
=10 V
(see Figure 20)
-
6
7
27
50
-
ns
ns
ns
ns
Table 7.
Source drain diode
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
Source-drain current
Source-drain current (pulsed)
-
1.4
5.6
mA
A
V
SD
(1)
1.
Pulsed: pulse duration = 300 μs, duty cycle 1.5%
Forward on voltage
I
SD
= 1.2 A, V
GS
=0
-
1.5
V
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 1.2 A, V
DD
= 60 V
di/dt = 100 A/μs,
(see Figure 19)
-
244
1
9
ns
μC
A
t
rr
Q
rr
I
RRM
Reverse recovery time
Reverse recovery charge
Reverse recovery current
I
SD
= 1.2 A,V
DD
= 60 V
di/dt=100 A/μs,
Tj=25 °C
(see Figure 19)
-
330
1.3
8
ns
μC
A



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