STD65N3LLH5 datasheet(4/17 Pages) STMICROELECTRONICS

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Electrical characteristics

STD65N3LLH5, STU65N3LLH5

4/17

Doc ID 17281 Rev 1

Electrical characteristics

(TCASE = 25 °C unless otherwise specified).

Table 4.

Static

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source breakdown

Voltage

ID = 250 µA, VGS= 0

IDSS

Zero gate voltage drain

current (VGS = 0)

VDS = 30 V

VDS = 30 V,Tc = 125 °C

µA

IGSS

Gate body leakage current

(VDS = 0)

VGS = ± 22 V

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

1.8

RDS(on)

Static drain-source on

resistance

VGS= 10 V, ID= 32.5 A

SMD version

0.0061 0.0069

Ω

VGS= 10 V, ID= 32.5 A

0.0065 0.0073

Ω

VGS= 4.5 V, ID= 32.5 A

SMD version

0.0084 0.0093

Ω

VGS= 4.5 V, ID= 32.5 A

0.0088 0.0097

Ω

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f=1 MHz,

VGS=0

1290

240

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD=15 V, ID = 65 A

VGS =4.5 V

(Figure 14)

3.6

3.4

Intrinsic gate resistance

f=1 MHz Gate DC Bias=0

test signal level = 20 mV

open drain

1.7

Ω

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