Drain to Source Breakdown Voltage vs. Junction Temperature

-50

25

50

75

100

125

150

0

-25

ICE4N73FP

I

V

T

t - Time (seconds)

Maximum Rate Forward Biased Safe Operating Area

Transient Thermal Response - Junction to Case

Single Pulse

T = 150°C

V

R

Package Limit

Thermal Limit

0.5

0.2

0.1

10us

100us

1ms

10ms

DC

0.05

0.02

Single Pulse

0.1

0.01

1.00

1.05

1

0.10

1.10

10

100

1.00

1.15

0.01

0.00

0.95

0.95

0.1

1.0E-05 1.0E-04

1.0E-03

1.0E-02

1.0E-01

1.0E-00

10

100

1000

1

V

Capacitance

Crss

Coss

Ciss

800

700

600

500

400

300

200

100

900

1000

0

0

30

40

50

20

10

I

T

Gate Threshold Voltage vs. Junction Temperature

0.4

0.5

0.6

0.7

0.8

0.9

1.0

1.1

1.2

1.3

-50

25

50

75

100

125

150

0

-25

Micross Components Ltd, United Kingdom, Tel: +44 1603 788967, Fax: +44 1603 788920, Web: www.micross.com, Email: chipcomponents@micross.com

4

Notes:

Ciss

Coss

Crss

P

DM

t1

t1

t2

t2

Duty Cycle, D =