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STL18N55M5 Datasheet(PDF) 7 Page - STMicroelectronics |
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STL18N55M5 Datasheet(HTML) 7 Page - STMicroelectronics |
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7 / 14 page ![]() STL18N55M5 Electrical characteristics Doc ID 17468 Rev 2 7/14 Figure 8. Capacitance variations Figure 9. Output capacitance stored energy Figure 10. Normalized gate threshold voltage vs temperature Figure 11. Normalized on resistance vs temperature Figure 12. Switching losses vs gate resistance (1) Figure 13. Normalized BVDSS vs temperature 1. Eon including reverse recovery of a SiC diode C 1000 100 10 1 0.1 10 VDS(V) (pF) 1 10000 100 Ciss Coss Crss AM08668v1 Eoss 1.5 1.0 0.5 0 0 100 VDS(V) (µJ) 400 2.0 200 300 2.5 3.0 500 3.5 4.0 AM08669v1 VGS(th) 1.00 0.90 0.80 0.70 -50 0 TJ(°C) (norm) -25 1.10 75 25 50 100 ID=250µA AM08670v1 RDS(on) 1.3 0.7 0.5 -50 0 TJ(°C) (norm) -25 75 25 50 100 ID=6.5A VGS=10V 1.1 0.9 2.1 1.5 1.9 1.7 AM08671v1 E 60 40 20 0 0 20 RG( Ω) ( μJ) 10 30 80 100 120 40 ID=9A VCL=400V Eon Eoff VGS=10V 140 AM08673v1 BVDSS -50 0 TJ(°C) (norm) -25 75 25 50 100 0.93 0.95 0.97 0.99 1.01 1.03 1.05 1.07 ID=1mA AM08672v1 |
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