STL18N55M5 datasheet(3/14 Pages) STMICROELECTRONICS

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STL18N55M5

Electrical ratings

Doc ID 17468 Rev 2

3/14

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage (VGS = 0)

550

VGS

Gate-source voltage

± 25

(1)

The value is rated according to Rthj-case

Drain current (continuous) at TC = 25 °C

(1)

Drain current (continuous) at TC = 100 °C

IDM

(1),(2)

Pulse width limited by safe operating area

Drain current (pulsed)

(3)

When mounted on FR-4 board of inch², 2oz Cu

Drain current (continuous) at Tamb = 25 °C

2.4

(3)

Drain current (continuous) at Tamb = 100 °C

1.5

IDM

(2),(3)

Drain current (pulsed)

9.6

PTOT

(3)

Total dissipation at Tamb = 25 °C

PTOT

(1)

Total dissipation at TC = 25 °C

IAR

Avalanche current, repetitive or not-

repetitive (pulse width limited by Tj max)

EAS

Single pulse avalanche energy

(starting Tj = 25 °C, ID = IAR, VDD = 50 V)

200

dv/dt (4)

ISD ≤ 13 A, di/dt ≤ 400 A/µs, VPeak < V(BR)DSS, VDD=400 V

Peak diode recovery voltage slope

V/ns

Tstg

Storage temperature

- 55 to 150

°C

Max. operating junction temperature

150

°C

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case Thermal resistance junction-case max

1.38

°C/W

Rthj-amb

(1)

When mounted on 1inch² FR-4 board, 2 oz Cu

Thermal resistance junction-amb max

°C/W

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