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Die Characteristics

DIE DIMENSIONS:

2010

µm x 3130µm x 483µm

METALLIZATION:

Type: Metal 1: AlCu (1%)

Thickness: Metal 1: 8k

Å

Type: Metal 2: AlCu (1%)

Thickness: Metal 2: 16k

Å

SUBSTRATE POTENTIAL

Unbiased

PASSIVATION:

Type: Nitride

Thickness: 4k

Å

TRANSISTOR COUNT:

248

PROCESS:

High Frequency Bipolar Dielectric Isolation

Metallization Mask Layout

HA5013

NC

NC

NC

OUT2

-IN2

+IN2

V-

+IN3

-IN3

OUT3

OUT1

-IN1

+IN1

V+

HA5013