Thermal Resistance

Parameter

Min. Typ. Max. Units Test Conditions

RthJC

Junction-to-Case

—

—

1.0

RthJ-PCB

Junction-to-PC Board

—

TBD

—

K/W

…

Soldered to a copper-clad PC board

Source-Drain Diode Ratings and Characteristics

Parameter

Min. Typ. Max. Units

Test Conditions

IS

Continuous Source Current (Body Diode)

—

—

45

Modified MOSFET symbol showing the

ISM

Pulse Source Current (Body Diode)



—

—

180

A

integral reverse p-n junction rectifier.

VSD Diode Forward Voltage

—

—

1.3

V

trr

Reverse Recovery Time

—

—

210

ns

Tj = 25°C, IF = 45A, di/dt ≤ 100A/µs

QRR Reverse Recovery Charge

—

—

1.7

µCVDD ≤ 50V „

ton

Forward Turn-On Time

Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.

IRFN3710 Device

maximum junction temperature.

Refer to current HEXFET reliability report.

EAS = [0.5 * L * (I

L

Peak IL = 45A, VGS = 10V, 25 ≤ RG ≤ 200Ω

VDD ≤ BVDSS, TJ ≤ 150°C

Suggested RG = 2.35

Ω

W/K = W/°C

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