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G4PC40U Datasheet(PDF) 1 Page - International Rectifier

Part # G4PC40U
Description  INSULATED GATE BIPOLAR TRANSISTOR(Vces=600V, Vce(on)typ.1.72V, @Vge=15V, Ic=20A)
PDF  8 Pages
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Manufacturer  IRF [International Rectifier]
Direct Link  http://www.irf.com
Logo IRF - International Rectifier

G4PC40U Datasheet(HTML) 1 Page - International Rectifier

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IRG4PC40U
UltraFast Speed IGBT
INSULATED GATE BIPOLAR TRANSISTOR
PD 91466E
E
C
G
n-channel
TO-247AC
Features
Features
Features
Features
Features
• UltraFast: Optimized for high operating
frequencies 8-40 kHz in hard switching, >200
kHz in resonant mode
• Generation 4 IGBT design provides tighter
parameter distribution and higher efficiency than
Generation 3
• Industry standard TO-247AC package
• Generation 4 IGBT's offer highest efficiency available
• IGBT's optimized for specified application conditions
• Designed to be a "drop-in" replacement for equivalent
industry-standard Generation 3 IR IGBT's
Benefits
Parameter
Min.
Typ.
Max.
Units
RθJC
Junction-to-Case
------
------
0.77
RθCS
Case-to-Sink, flat, greased surface
------
0.24
------
°C/W
RθJA
Junction-to-Ambient, typical socket mount
------
------
40
Wt
Weight
------
6 (0.21)
------
g (oz)
Absolute Maximum Ratings
Parameter
Max.
Units
VCES
Collector-to-Emitter Voltage
600
V
IC @ TC = 25°C
Continuous Collector Current
40
IC @ TC = 100°C
Continuous Collector Current
20
A
ICM
Pulsed Collector Current
Q
160
ILM
Clamped Inductive Load Current
R
160
VGE
Gate-to-Emitter Voltage
±20
V
EARV
Reverse Voltage Avalanche Energy
S
15
mJ
PD @ TC = 25°C
Maximum Power Dissipation
160
PD @ TC = 100°C
Maximum Power Dissipation
65
TJ
Operating Junction and
-55 to +150
TSTG
Storage Temperature Range
°C
Soldering Temperature, for 10 sec.
300 (0.063 in. (1.6mm) from case)
Mounting torque, 6-32 or M3 screw.
10 lbf•in (1.1N•m)
Thermal Resistance
VCES = 600V
VCE(on) typ.
= 1.72V
@VGE = 15V, IC = 20A
12/30/00
W
www.irf.com
1


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