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G4PC40U Datasheet(PDF) 2 Page - International Rectifier |
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G4PC40U Datasheet(HTML) 2 Page - International Rectifier |
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2 / 8 page  IRG4PC40U 2 www.irf.com Notes: Q Repetitive rating; VGE = 20V, pulse width limited by max. junction temperature. ( See fig. 13b ) R VCC = 80%(VCES), VGE = 20V, L = 10µH, RG = 10Ω, (See fig. 13a) S Repetitive rating; pulse width limited by maximum junction temperature. T Pulse width ≤ 80µs; duty factor ≤ 0.1%. U Pulse width 5.0µs, single shot. Parameter Min. Typ. Max. Units Conditions Qg Total Gate Charge (turn-on) ---- 100 150 IC = 20A Qge Gate - Emitter Charge (turn-on) ---- 16 25 nC VCC = 400V See Fig. 8 Qgc Gate - Collector Charge (turn-on) ---- 40 60 VGE = 15V td(on) Turn-On Delay Time ---- 34 ---- TJ = 25°C tr Rise Time ---- 19 ---- ns IC = 20A, VCC = 480V td(off) Turn-Off Delay Time ---- 110 175 VGE = 15V, RG = 10Ω tf Fall Time ---- 120 180 Energy losses include "tail" Eon Turn-On Switching Loss ---- 0.32 ---- Eoff Turn-Off Switching Loss ---- 0.35 ---- mJ See Fig. 10, 11, 13, 14 Ets Total Switching Loss ---- 0.67 1.0 td(on) Turn-On Delay Time ---- 30 ---- TJ = 150°C, tr Rise Time ---- 19 ---- ns IC = 20A, VCC = 480V td(off) Turn-Off Delay Time ---- 220 ---- VGE = 15V, RG = 10Ω tf Fall Time ---- 160 ---- Energy losses include "tail" Ets Total Switching Loss ---- 1.4 ---- mJ See Fig. 13, 14 LE Internal Emitter Inductance ---- 13 ---- nH Measured 5mm from package Cies Input Capacitance ---- 2100 ---- VGE = 0V Coes Output Capacitance ---- 140 ---- pF VCC = 30V See Fig. 7 Cres Reverse Transfer Capacitance ---- 34 ---- ƒ = 1.0MHz Switching Characteristics @ TJ = 25°C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V(BR)CES Collector-to-Emitter Breakdown Voltage 600 ---- ---- V VGE = 0V, IC = 250µA V(BR)ECS Emitter-to-Collector Breakdown Voltage T 18 ---- ---- V VGE = 0V, IC = 1.0A ∆V(BR)CES/∆TJ Temperature Coeff. of Breakdown Voltage ---- 0.63 ---- V/°CVGE = 0V, IC = 1.0mA VCE(on) Collector-to-Emitter Saturation Voltage ---- 1.72 2.1 IC = 20A VGE = 15V ---- 2.15 ---- V IC = 40A ---- 1.7 ---- IC = 20A, TJ = 150°C VGE(th) Gate Threshold Voltage 3.0 ---- 6.0 VCE = VGE, IC = 250µA ∆VGE(th)/∆TJ Temperature Coeff. of Threshold Voltage ---- -13 ---- mV/°CVCE = VGE, IC = 250µA gfe Forward Transconductance U 11 18 ---- S VCE = 100V, IC = 20A ---- ---- 250 VGE = 0V, VCE = 600V ICES Zero Gate Voltage Collector Current ---- ---- 2.0 µ A VGE = 0V, VCE = 10V, TJ = 25°C ---- ---- 2500 VGE = 0V, VCE = 600V, TJ = 150°C IGES Gate-to-Emitter Leakage Current ---- ---- ±100 n A VGE = ±20V Electrical Characteristics @ TJ = 25°C (unless otherwise specified) See Fig. 2, 5 |
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