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AN1496 Datasheet(PDF) 4 Page - STMicroelectronics

Part # AN1496
Description  Flash Programming / Reprogramming
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN1496 Datasheet(HTML) 4 Page - STMicroelectronics

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AN1496 - APPLICATION NOTE
4/
17
Table 1 : Commands for ST10 with 0.35
µm embedded Flash
Notes 1. Address bit A14, A15 and above are don’t care for coded address inputs.
2. X = Don’t Care.
3. WA = Write Address: address of memory location to be programmed.
4. WD = Write Data: 16-bit data to be programmed
5. Optional, additional blocks addresses must be entered within a time-out delay (96 µs) after last write entry, timeout status can be
verified through FSB.3 value. When full command is entered, read Data Polling or Toggle bit until Erase is completed or suspended.
6. Read Data Polling or Toggle bit until Erase completes.
7. WPR = Write protection register. To protect code, bit 15 of WPR must be ‘0’. To protect block N (N=0,1,...), bit N of WPR must be
‘0’. Bit that are already at ‘0’ in protection register must also be ‘0’ in WPR, else a writing error will occurs (it is not possible to write a
‘1’ in a bit already programmed at ‘0’).
8. MEM = any address inside the Flash memory space. Absolute addressing mode must be used (MOV MEM, Rn), and instruction
must be executed from Flash memory space.
9. Odd word address = 4n-2 where n = 0, 1, 2, 3..., ex. 0002h, 0006h...
Instruction
Mne
Cycle
1st
Cycle
2nd
Cycle
3rd Cycle
4th Cycle
5th
Cycle
6th
Cycle
7th
Cycle
Read/Reset
RD
1+
Addr.1
X 2
Read Memory Array until a new write cycle is initiated
Data
xxF0h
Read/Reset
RD
3+
Addr.1
x1554h
x2AA8h
xxxxxh
Read Memory Array until a new write
cycle is initiated
Data
xxA8h
xx54h
xxF0h
Program Word
PW
4
Addr.1
x1554h
x2AA8h
x1554h
WA 3
Read Data Polling or
Toggle Bit until Program
completes.
Data
xxA8h
xx54h
xxA0h
WD 4
Block Erase
BE
6
Addr.1
x1554h
x2AA8h
x1554h
x1554h
x2AA8h
BA
BA’ 5
Data
xxA8h
xx54h
xx80h
xxA8h
xx54h
xx30h
xx30h
Chip Erase
CE
6
Addr.1
x1554h
x2AA8h
x1554h
x1554h
x2AA8h
x1554h
Note 6
Data
xxA8h
xx54h
xx80h
xxA8h
xx54h
xx10h
Erase Suspend
ES
1
Addr.1
X2
Read until Toggle stops, then read or program all data needed
from block(s) not being erased then Resume Erase.
Data
xxB0h
Erase Resume
ER
1
Addr.1
X2
Read Data Polling or Toggle bit until Erase completes or Erase
is supended another time.
Data
xx30h
Set Block/Code
Protection
SP
4
Addr.1
x2A54h
x15A8h
x2A54h
Any odd
word
address 9
Data
xxA8h
xx54h
xxC0h
WPR 7
Read
Protection
Status
RP
4
Addr.1
x2A54h
x15A8h
x2A54h
Any odd
word
address 9
Read Protection Register
until a new write cycle is
initiated.
Data
xxA8h
xx54h
xx90h
Read
PR
Block
Temporary
Unprotection
BTU
4
Addr.1
x2A54h
x15A8h
x2A54h
X2
Data
xxA8h
xx54h
xxC1h
xxF0h
Code
Temporary
Unprotection
CTU
1
Addr.1
MEM 8
Write cycles must be executed from Flash.
Data
FFFFh
Code
Temporary
Protection
CTP
1
Addr.1
MEM 8
Write cycles must be executed from Flash.
Data
FFFBh



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