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AN1012 Datasheet(PDF) 25 Page - STMicroelectronics

Part # AN1012
Description  Predicting the battery life and data
PDF  33 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN1012 Datasheet(HTML) 25 Page - STMicroelectronics

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AN1012
Product data
Doc ID 6395 Rev 4
25/33
Appendix A
Product data
Note:
The symbol “>>” means, “... much greater than...”
Table 7.
Data for ZEROPOWER® and TIMEKEEPER® devices
Table 8.
Data from hybrid/module devices (VCC duty cycle = 0%)
Note:
These devices are not recommended for new design. Please contact local ST sales office
for availability.
Device
Process technology
SRAM
Cell
Battery type
IBAT
(T = 20°C)
(nA)
Typical data
retention
lifetime(1)
(years)
1.
The data retention lifetime can be significantly increased by using the SNAPHAT (ZEROPOWER or TIMEKEEPER, as
appropriate) with the higher capacity BR1632 battery.
SNAPHAT(2)
2.
The larger capacity BR1632 (120 mAh) battery is also available in the SNAPHAT package.
CAPHAT
M48Z02/12
0.6
μm, HCMOS4PZ
4T
n/a
BR1225
9
10
M48Z08/18
0.6
μm, HCMOS4PZ
4T
BR1225
BR1225
37
10
M48Z35/Y/AV
0.6
μm, HCMOS4PZ
4T
BR1225
BR1225
148
10
M48Z58/Y
0.6
μm, HCMOS4PZ
4T
BR1225
BR1225
37
10
M48T02/12
0.6
μm, HCMOS4PZ
4T
N/A
BR1632
506
10
M48T08/18
0.6
μm, HCMOS4PZ
4T
BR1225
BR1632
535
10
M48T35/Y/AV
0.6
μm, HCMOS4PZ
4T
BR1225
BR1632
646
7/10
M48T37Y
0.6
μm, HCMOS4PZ
4T
BR1225
N/A
646
7
M48T58/Y
0.6
μm, HCMOS4PZ
4T
BR1225
BR1225
535
7
Device
Specification
at T = 25°C
(years)
Experimental conditions (years)
0°C
25°C
70°C
M48Z128/Y
10
>> 20
> 20
2.3
M48Z129V
10
>> 20
> 20
2.3
M48Z512A/AV/AY
10
>> 20
> 20
6.0
M48Z2M1V/Y
10
> 20
> 20
3.1
M48T128Y
10
> 20
16.6
2.0
M48T129V/Y
10
> 20
16.6
2.0
M48T512Y
10
> 20
19.4
4.8



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