| Electronic Components Datasheet Search |
|
AN1453 Datasheet(PDF) 6 Page - STMicroelectronics |
|
|
|||||||||||||||||||||||||||||
AN1453 Datasheet(HTML) 6 Page - STMicroelectronics |
|
6 / 9 page ![]() APPLICATION NOTE 6/4 If C is a low value of capacitance, the expression leads to a first order differential equation: VV V L dI / dt RD R f R max == + ⋅ with: () dI /dt I /t and t Q / I /2 dI / dt I / 2 Q R RM b b rrb RM RRM 2 rr == =⋅ () b If the diode is of a snap-off type, we have t0, Q 0 b rrb →→ and dIR/dt is very high, consequently V Rmax is considerable. There is a risk to reach the breakdown voltage of the diode. (It is not guaranteed by the manufacturer) 2) With a snubber, if it is supposed that CC C S j Qrrb >> + (more true for an ultrafast PN diode), we have a simple Rs,Lf,CS circuit to define by the second order differential equation: dV dt 2m dV dt V. V 2 C 2 0 C 0 2 R0 2 R SS ++ ⋅ = ωω ω where: m: the absorption coefficient m R 2 C L SS f = 0: natural frequency ω 0 fS 1 LC = ⋅ There are 3 possible cases: - m>1 behaviour without oscillation (over damping) - m<1 behaviour with oscillation damped (under damping), where the frequency oscillation can be determined by: ωω r 2 1m =− 0 - m=1 limit of behaviour without oscillation (critical damping) Like this, in this case, it is possible to suppress the oscillation across the diode with m>1. 3.2.1.2 Turn-off behaviour for a Schottky diode For an ideal Schottky diode, there is no recovery charge (Qrr=0). Therefore, it is said that the diode has a capacitive type recovery Fig. 14. In this perfect case at t=t0, we have: I I 0 and V 0 LRM D f == ≈ Without a snubber circuit, the new solution of the differential equation gives: VV 2 V DR R max == ⋅ Unfortunately, it is difficult to realize a perfect high voltage Schottky. The reason is the presence of a parasitic bipolar diode in parallel with the Schottky. If it is polarized, the recovery charge is added at the turn-off. The phenomenon begins to appear for a 100V technology. In the same conditions as before, the STPS16150CT is used: dI /dt=250A/µs R I =1.6A RM V =42V R 20V/div 2A/div 50ns/div dV/dt I I I V V V Tcase=100°C R =22ohms s C =2.2nF s t0 t0 I V V =120V Rmax V =58V Rmax dI /dt=130A/µs F Fig. 15: Switching behaviour of a STPS16150CT I D V D t 0 V R t V Rma x Fig. 14: Turn-off for a perfect Schottky diode without snubber |
|
|
Link URL |
| Does ALLDATASHEET help your business so far? [ DONATE ] |
About Alldatasheet | Advertisement | Contact us | Privacy Policy | Link to Datasheet | Link Exchange | Manufacturer List All Rights Reserved©Alldatasheet.com |
| Russian : Alldatasheetru.com | Korean : Alldatasheet.co.kr | Spanish : Alldatasheet.es | French : Alldatasheet.fr | Italian : Alldatasheetit.com Portuguese : Alldatasheetpt.com | Polish : Alldatasheet.pl | Vietnamese : Alldatasheet.vn Indian : Alldatasheet.in | Mexican : Alldatasheet.com.mx | British : Alldatasheet.co.uk | New Zealand : Alldatasheet.co.nz |
|
Family Site : ic2ic.com |
icmetro.com |