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AN1453 Datasheet(PDF) 6 Page - STMicroelectronics

Part # AN1453
Description  NEW FAMILY OF 150V POWER SCHOTTKY
PDF  9 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN1453 Datasheet(HTML) 6 Page - STMicroelectronics

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APPLICATION NOTE
6/4
If C is a low value of capacitance, the expression
leads to a first order differential equation:
VV
V
L
dI / dt
RD
R
f
R
max
==
+
⋅
with:
()
dI /dt
I
/t
and t
Q
/ I
/2
dI / dt
I
/ 2 Q
R
RM
b
b
rrb
RM
RRM
2
rr
==
=⋅
()
b
If the diode is of a snap-off type, we have
t0, Q
0
b
rrb
→→
and
dIR/dt
is
very
high,
consequently V
Rmax is considerable. There is a risk
to reach the breakdown voltage of the diode. (It is
not guaranteed by the manufacturer)
2) With a snubber, if it is supposed that
CC
C
S
j
Qrrb
>>
+
(more true for an ultrafast PN
diode), we have a simple Rs,Lf,CS circuit to define
by the second order differential equation:
dV
dt
2m
dV
dt
V. V
2
C
2
0
C
0
2
R0
2
R
SS
++
⋅
=
ωω
ω
where:
m: the absorption coefficient
m
R
2
C
L
SS
f
=
0: natural frequency
ω
0
fS
1
LC
=
⋅
There are 3 possible cases:
- m>1 behaviour without oscillation (over damping)
- m<1 behaviour with oscillation damped (under
damping), where the frequency oscillation can be
determined by:
ωω
r
2
1m
=−
0
- m=1 limit of behaviour without oscillation (critical
damping)
Like this, in this case, it is possible to suppress the
oscillation across the diode with m>1.
3.2.1.2 Turn-off behaviour for a Schottky diode
For an ideal Schottky diode, there is no recovery
charge (Qrr=0). Therefore, it is said that the diode
has a capacitive type recovery Fig. 14.
In this perfect case at t=t0, we have:
I
I
0 and V
0
LRM
D
f
==
≈
Without a snubber circuit, the new solution of the
differential equation gives:
VV
2 V
DR
R
max
== ⋅
Unfortunately, it is difficult to realize a perfect high
voltage Schottky. The reason is the presence of a
parasitic bipolar diode in parallel with the Schottky.
If it is polarized, the recovery charge is added at
the turn-off. The phenomenon begins to appear for
a 100V technology.
In
the
same
conditions
as
before,
the
STPS16150CT is used:
dI /dt=250A/µs
R
I =1.6A
RM
V =42V
R
20V/div
2A/div
50ns/div
dV/dt
I
I
I
V
V
V
Tcase=100°C
R =22ohms
s
C =2.2nF
s
t0
t0
I
V
V
=120V
Rmax
V
=58V
Rmax
dI /dt=130A/µs
F
Fig. 15: Switching behaviour of a STPS16150CT
I
D
V
D
t
0
V
R
t
V
Rma x
Fig. 14: Turn-off for a perfect Schottky diode
without snubber



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