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AN4671 Datasheet(PDF) 10 Page - STMicroelectronics |
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AN4671 Datasheet(HTML) 10 Page - STMicroelectronics |
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10 / 17 page ![]() How to minimize switching losses AN4671 10/17 DocID027654 Rev 1 SiC reverse recovery characteristics. In the presence of Miller turn-on, however, the reverse recovery energy can significantly impact the global switching loss. The Miller effect may occur in a half-bridge converter under one or more of the following conditions: • a high dv/dt (a lower value of Ron-LS) • a high value of Roff-HS • a high value of the intrinsic RG of the MOSFET • a high value of the capacitive divider CGD/CGS Three combinations of Roff-HS, Ron-LS are therefore tested while Voff-HS moves from -10 V to 0 V: 1. Ron-LS = 4.7 Ω , R off-HS = 2.2 Ω (best case for Miller effect) 2. Ron-LS = 4.7 Ω , R off-HS = 15 Ω (worst case for Miller effect) 3. Ron-LS = Roff-HS = 15 Ω (intermediate case) Do not exceed -6 V in the negative direction so as to maintain a safe margin with respect to the -10 V VGS absolute maximum rating (the Voff-HS = -10 V scenario is included in the results for the purposes of completeness only). Figure 9: SCT30N120 Miller turn-on test results Therefore, at least one of the following rules must be adopted when the SCT30N120 operates in half-bridge derived topologies: 1. implement separate turn-on and turn-off paths with the correct ratio between turn-on and turn-off gate resistors: always maintain Rg-on >1.5 * Rg-off 2. use a negative off voltage in the -6 V to -4 V range to keep the MOSFET off A small negative gate-source voltage (-2 V approx.), even if it is not mandatory, can further reduce losses and increase robustness when condition 1 (which is easier to implement) is satisfied. |
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