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AN4671 Datasheet(PDF) 10 Page - STMicroelectronics

Part # AN4671
Description  How to fine tune your SiC MOSFET gate driver to minimize losses
PDF  17 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN4671 Datasheet(HTML) 10 Page - STMicroelectronics

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How to minimize switching losses
AN4671
10/17
DocID027654 Rev 1
SiC reverse recovery characteristics. In the presence of Miller turn-on, however, the
reverse recovery energy can significantly impact the global switching loss.
The Miller effect may occur in a half-bridge converter under one or more of the following
conditions:
•
a high dv/dt (a lower value of Ron-LS)
•
a high value of Roff-HS
•
a high value of the intrinsic RG of the MOSFET
•
a high value of the capacitive divider CGD/CGS
Three combinations of Roff-HS, Ron-LS are therefore tested while Voff-HS moves from -10 V to
0 V:
1.
Ron-LS
= 4.7 Ω , R
off-HS
= 2.2 Ω (best case for Miller effect)
2.
Ron-LS
= 4.7 Ω , R
off-HS
= 15 Ω (worst case for Miller effect)
3.
Ron-LS = Roff-HS
= 15 Ω (intermediate case)
Do not exceed -6 V in the negative direction so as to maintain a safe margin with respect to
the -10 V VGS absolute maximum rating (the Voff-HS = -10 V scenario is included in the
results for the purposes of completeness only).
Figure 9: SCT30N120 Miller turn-on test results
Therefore, at least one of the following rules must be adopted when the SCT30N120
operates in half-bridge derived topologies:
1.
implement separate turn-on and turn-off paths with the correct ratio between turn-on
and turn-off gate resistors: always maintain Rg-on >1.5 * Rg-off
2.
use a negative off voltage in the -6 V to -4 V range to keep the MOSFET off
A small negative gate-source voltage (-2 V approx.), even if it is not mandatory, can further
reduce losses and increase robustness when condition 1 (which is easier to implement) is
satisfied.



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