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AN3960 Datasheet(PDF) 8 Page - STMicroelectronics

Part # AN3960
Description  ESD considerations for touch sensing applications
PDF  21 Pages
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Manufacturer  STMICROELECTRONICS [STMicroelectronics]
Direct Link  http://www.st.com
Logo STMICROELECTRONICS - STMicroelectronics

AN3960 Datasheet(HTML) 8 Page - STMicroelectronics

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Risks of ESD
AN3960
8/21
Doc ID 022082 Rev 1
Figure 2.
IEC61000-4-2 ESD current waveform (RD = 330 Ω/CD = 150 pF)
2.2.4
MIL-STD-883H
This standard method classifies microcircuits according to their susceptibility to damage or
degradation by exposure to ESD. For this standard RD is 1.5 Ωand CD is 100 pF. It is well
suited for electronic device tests as ESD stress can be applied directly onto its pins.
2.2.5
ESD standard summary
An application has to align with one or more standards as agreed with the customer. Table 1
summarizes the test conditions for the ESD standards.
When an ESD event occurs, the standards outlined in Section 2.2 describe four test results
which can occur in a real application.
120
100
80
60
53
40
27
20
0
-10
0
10
20
30
40
506070
80
90
100
Time (ns)
Rise time = 0.7 ns to 1 ns
ai18793
Table 1.
Test conditions for ESD standards
Standard
Model
RD
CD
±VD
JS-001-2010
HBM
1.5 k
Ω
100 pF
8 kV
SP723 EIAJ IC121
MM
0
Ω
200 pF
2 kV
IEC61000-4-2
(level 4)(1)
1.
Level 4 = maximum level of test voltage in the IEC61000-4-2 standard.
HBM and air discharge
330
Ω
150 pF
15 kV
HBM, and direct discharge
330
Ω
150 pF
8 kV
MIL-STD-883H (class 3B)(2)
2.
Class 3B = maximum level of test voltage in the MIL-STD-883H standard.
HBM
1.5 k
Ω
100 pF
8 kV



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