MMBT3906 datasheet(1/5 Pages) TSC

Part #	MMBT3906

Description	350mW, PNP Small Signal Transistor

PDF	5 Pages

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Manufacturer	TSC [Taiwan Semiconductor Company, Ltd]

Direct Link	http://www.taiwansemi.com

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1 / 5 page

- Epitaxial planar die construction

- Surface device type mounting

- Moisture sensitivity level 1

- Matte Tin (Sn) lead finish with Nickel (Ni) underplate

- Pb free version and RoHS compliant

- Packing code with suffix "G" means

green compound (halogen-free)

- Case: SOT- 23, molded plastic

- Terminal: Matte tin plated, lead free,

solderable per MIL-STD-202, Method 208 guaranteed

- High temperature soldering guaranteed: 260

oC/10s

- Weight: 0.008g (approximately)

- Marking Code: 2A

SYMBOL

UNIT

PD

mW

VCBO

V

VCEO

V

VEBO

V

IC

mA

RθJA

oC/W

TJ , TSTG

oC

Notes:1. Valid provided that electrodes are kept at ambient temperature

SYMBOL

UNIT

IC = 10 μAV(BR)CBO

V

IC = -1 mA

V(BR)CEO

V

IE = -10 μAV(BR)EBO

V

VCB = -40 V

ICBO

nA

VEB = -6 V

IEBO

nA

VCE = -1 V

IC = -10 mA

IC = -50 mA

IC = -10 mA

IC= -50 mA

Gain-Bandwidth Product

VCE = -20 V

IC = -10 mA

fT

MHz

Output Capacitance

VCB = -5 V

IE = 0

Cobo

pF

Delay time

VCC = -3 V

VBE = -0.5 V

td

ns

Rise time

tr

ns

Storage time

VCC = -3 V

ts

ns

Fall time

tf

ns

Document Number: DS_S1412033

Version: F14

MMBT3906

Taiwan Semiconductor

Small Signal Product

350mW, PNP Small Signal Transistor

FEATURES

MECHANICAL DATA

SOT-23

MAXIMUM RATINGS AND ELECTRICAL CHARACTERSTICS (TA=25℃ unless otherwise noted)

-5

-

PARAMETER

VALUE

30

hFE

IC = -0.1 mA

Collector Base Cut-off Current

Emitter Base Cut-off Current

-0.85

-

-0.95

-

-0.25

--0.4

Junction and Storage Temperature Range

Thermal Resistance Junction-Ambient

Collector Current

Emitter-Base Voltage

Collector-Emitter Voltage

-55 to + 150

357

Collector-Base Voltage

Power Dissipation

Collector-Base Breakdown Voltage

Collector-Emitter Breakdown Voltage

Emitter-Base Breakdown Voltage

-200

-5

-40

350

IC = -10 mA

IB1 = -1.0 mA

VCE(sat)

V

VBE(sat)

V

IB = -1 mA

IC = -100 mA

250

IB = -1 mA

IB = -5 mA

PARAMETER

IC = 0

IB = 0

IE = 0

DC Current Gain

Collector-Emitter Saturation Voltage

Base-Emitter Saturation Voltage

IB1 = IB2 = -1.0 mA

MAX

MIN

-40

-

IC = -10 mA

f= 1MHz

f= 100MHz

IB = -5 mA

-

-100

--50

-

IC = -50 mA

IC = -10 mA

IC = -1 mA

60

80

100

35

300

-

-4.5

-0.65

225

75

-

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