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NX3L1T53 Datasheet(PDF) 7 Page - NXP Semiconductors |
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NX3L1T53 Datasheet(HTML) 7 Page - NXP Semiconductors |
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7 / 24 page ![]() NX3L1T53 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved. Product data sheet Rev. 8 — 23 January 2013 7 of 24 NXP Semiconductors NX3L1T53 Low-ohmic single-pole double-throw analog switch 11.1 Test circuits 11.2 ON resistance VI =0.3V orVCC 0.3 V; VO =VCC 0.3 V or 0.3 V. Fig 6. Test circuit for measuring OFF-state leakage current VO IS 001aad390 S Z E Y0 Y1 VCC GND switch switch 1 1 2 2 VIH VIL S VIH VIH E VI VIL or VIH VIH VI =0.3V orVCC 0.3 V; VO = open circuit. Fig 7. Test circuit for measuring ON-state leakage current IS 001aad391 S Z E Y0 Y1 VCC GND VI VIL or VIH VIL switch 1 2VIH VIL S VIL VIL E VO switch 1 2 Table 8. ON resistance At recommended operating conditions; voltages are referenced to GND (ground = 0 V); for graphs see Figure 9 to Figure 15. Symbol Parameter Conditions 40 C to +85 C 40 C to +125 C Unit Min Typ[1] Max Min Max RON(peak) ON resistance (peak) VI =GND to VCC; ISW = 100 mA; see Figure 8 VCC = 1.4 V - 1.6 3.7 - 4.1 VCC = 1.65 V - 1.0 1.6 - 1.7 VCC = 2.3 V - 0.55 0.8 - 0.9 VCC =2.7 V - 0.5 0.75 - 0.9 VCC =4.3 V - 0.5 0.75 - 0.9 |
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