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93LC46AB Datasheet(PDF) 7 Page - Microchip Technology |
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93LC46AB Datasheet(HTML) 7 Page - Microchip Technology |
7 / 12 page ![]() 93LC46A/B 2000 Microchip Technology Inc. DS21173E-page 7 3.8 WRITE The WRITE instruction is followed by 8 bits (93LC46A) or 16 bits (93LC46B) of data which are written into the specified address. After the last data bit is put on the DI pin, the falling edge of CS initiates the self-timed auto- erase and programming cycle. The DO pin indicates the READY/BUSY status of the device, if CS is brought high after a minimum of 250 ns low (TCSL) and before the entire write cycle is complete. DO at logical “0” indicates that programming is still in progress. DO at logical “1” indicates that the register at the specified address has been written with the data specified and the device is ready for another instruc- tion. 3.9 Write All (WRAL) The Write All (WRAL) instruction will write the entire memory array with the data specified in the command. The WRAL cycle is completely self-timed and com- mences at the falling edge of the CS. Clocking of the CLK pin is not necessary after the device has entered the WRAL cycle. The WRAL command does include an automatic ERAL cycle for the device. Therefore, the WRAL instruction does not require an ERAL instruction but the chip must be in the EWEN status. The DO pin indicates the READY/BUSY status of the device if CS is brought high after a minimum of 250 ns low (TCSL). FIGURE 3-7: WRITE TIMING FIGURE 3-8: WRAL TIMING CS CLK DI DO 1 0 1An ••• A0 Dx ••• D0 BUSY READY HIGH-Z HIGH-Z Twc TCSL TCZ TSV CS CLK DI DO HIGH-Z 1 0 0 01 X ••• X Dx ••• D0 HIGH-Z BUSY READY TWL Guaranteed at Vcc = 4.5V to +6.0V. TCSL TSV TCZ |
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