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MMDF4C03HD Datasheet(PDF) 2 Page - ON Semiconductor

Part # MMDF4C03HD
Description  Complementary SO??, Dual Power MOSFET
PDF  16 Pages
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Manufacturer  ONSEMI [ON Semiconductor]
Direct Link  http://www.onsemi.com
Logo ONSEMI - ON Semiconductor

MMDF4C03HD Datasheet(HTML) 2 Page - ON Semiconductor

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MMDF4C03HD
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic
Symbol
Polarity
Min
Typ
Max
Unit
OFF CHARACTERISTICS
Drain−to−Source Breakdown Voltage
(VGS = 0 Vdc, ID = 0.25 mAdc)
V(BR)DSS
−
30
−
−
Vdc
Zero Gate Voltage Drain Current
(VDS = 30 Vdc, VGS = 0 Vdc)
IDSS
(N)
(P)
−
−
−
−
1.0
1.0
µAdc
Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0)
IGSS
−
−
−
±100
nAdc
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc)
Threshold Temperature Coefficient (Negative)
VGS(th)
−
−
1.0
−
−
−
−
−
Vdc
mV/
°C
Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 3.5 Adc)
(VGS = 10 Vdc, ID = 3.5 Adc)
RDS(on)
Note 2
(N)
(P)
−
−
0.037
0.075
0.05
0.085
Ohms
Static Drain−to−Source On−Resistance
(VGS = 4.5 Vdc, ID = 2.5 Adc)
(VGS = 4.5 Vdc, ID = 2.0 Adc)
RDS(on)
Note 2
(N)
(P)
−
−
0.55
0.125
0.08
0.16
Ohms
Forward Transconductance
(VDS = 15 Vdc, ID = 3.5 Adc)
gFS
(N)
(P)
−
−
9.0
6.0
−
−
mhos
DYNAMIC CHARACTERISTICS
Input Capacitance
(V
24 Vd
Ciss
(N)
(P)
−
−
430
425
600
600
pF
Output Capacitance
(VDS = 24 Vdc,
VGS = 0 Vdc,
f = 1.0 MHz)
Coss
(N)
(P)
−
−
217
209
300
300
Transfer Capacitance
f = 1.0 MHz)
Crss
(N)
(P)
−
−
67.5
57.2
135
80
SWITCHING CHARACTERISTICS (Note 2)
Turn−On Delay Time
td(on)
(N)
(P)
−
−
8.2
11.7
16.4
23.4
ns
Rise Time
(VDD = 15 Vdc,
ID = 1.0 Adc,
tr
(N)
(P)
−
−
8.48
15.8
16.9
31.6
Turn−Off Delay Time
ID = 1.0 Adc,
VGS = 10 Vdc,
RG = 6.0 Ω)
td(off)
(N)
(P)
−
−
89.6
167.3
179
334.6
Fall Time
tf
(N)
(P)
−
−
61.1
102.6
122
205.2
Total Gate Charge
(See Figure 8)
QT
(N)
(P)
−
−
15.7
14.8
31.4
29.6
nC
g
(VDS = 10 Vdc,
ID =35Adc
Q1
(N)
(P)
−
−
2.0
1.7
−
−
ID = 3.5 Adc,
VGS = 10 Vdc)
Q2
(N)
(P)
−
−
4.6
4.7
−
−
Q3
(N)
(P)
−
−
3.9
3.4
−
−
2. Switching characteristics are independent of operating junction temperature.



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