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MMDF4C03HD Datasheet(PDF) 2 Page - ON Semiconductor |
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MMDF4C03HD Datasheet(HTML) 2 Page - ON Semiconductor |
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2 / 16 page ![]() MMDF4C03HD http://onsemi.com 2 ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Polarity Min Typ Max Unit OFF CHARACTERISTICS Drain−to−Source Breakdown Voltage (VGS = 0 Vdc, ID = 0.25 mAdc) V(BR)DSS − 30 − − Vdc Zero Gate Voltage Drain Current (VDS = 30 Vdc, VGS = 0 Vdc) IDSS (N) (P) − − − − 1.0 1.0 µAdc Gate−Body Leakage Current (VGS = ± 20 Vdc, VDS = 0) IGSS − − − ±100 nAdc ON CHARACTERISTICS (Note 2) Gate Threshold Voltage (VDS = VGS, ID = 250 µAdc) Threshold Temperature Coefficient (Negative) VGS(th) − − 1.0 − − − − − Vdc mV/ °C Drain−to−Source On−Resistance (VGS = 10 Vdc, ID = 3.5 Adc) (VGS = 10 Vdc, ID = 3.5 Adc) RDS(on) Note 2 (N) (P) − − 0.037 0.075 0.05 0.085 Ohms Static Drain−to−Source On−Resistance (VGS = 4.5 Vdc, ID = 2.5 Adc) (VGS = 4.5 Vdc, ID = 2.0 Adc) RDS(on) Note 2 (N) (P) − − 0.55 0.125 0.08 0.16 Ohms Forward Transconductance (VDS = 15 Vdc, ID = 3.5 Adc) gFS (N) (P) − − 9.0 6.0 − − mhos DYNAMIC CHARACTERISTICS Input Capacitance (V 24 Vd Ciss (N) (P) − − 430 425 600 600 pF Output Capacitance (VDS = 24 Vdc, VGS = 0 Vdc, f = 1.0 MHz) Coss (N) (P) − − 217 209 300 300 Transfer Capacitance f = 1.0 MHz) Crss (N) (P) − − 67.5 57.2 135 80 SWITCHING CHARACTERISTICS (Note 2) Turn−On Delay Time td(on) (N) (P) − − 8.2 11.7 16.4 23.4 ns Rise Time (VDD = 15 Vdc, ID = 1.0 Adc, tr (N) (P) − − 8.48 15.8 16.9 31.6 Turn−Off Delay Time ID = 1.0 Adc, VGS = 10 Vdc, RG = 6.0 Ω) td(off) (N) (P) − − 89.6 167.3 179 334.6 Fall Time tf (N) (P) − − 61.1 102.6 122 205.2 Total Gate Charge (See Figure 8) QT (N) (P) − − 15.7 14.8 31.4 29.6 nC g (VDS = 10 Vdc, ID =35Adc Q1 (N) (P) − − 2.0 1.7 − − ID = 3.5 Adc, VGS = 10 Vdc) Q2 (N) (P) − − 4.6 4.7 − − Q3 (N) (P) − − 3.9 3.4 − − 2. Switching characteristics are independent of operating junction temperature. |
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