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MMDF4C03HD Datasheet(PDF) 3 Page - ON Semiconductor |
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MMDF4C03HD Datasheet(HTML) 3 Page - ON Semiconductor |
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3 / 16 page ![]() MMDF4C03HD http://onsemi.com 3 ELECTRICAL CHARACTERISTICS − continued (TA = 25°C unless otherwise noted) Characteristic Symbol Polarity Min Typ Max Unit SOURCE−DRAIN DIODE CHARACTERISTICS Forward On−Voltage (Note 2) (IS = 1.7 Adc, VGS = 0 Vdc) (IS = −1.7 Adc, VGS = 0 Vdc) VSD (N) (P) − − 0.77 0.90 1.2 1.2 Vdc Reverse Recovery Time (N) (ID = 3.5 Adc, trr (N) (P) − − 54.5 77.4 − − ns (ID = 3.5 Adc, VGS = 0 Vdc dIS/dt = 100 A/µs) ta (N) (P) − − 14.8 19.9 − − (P) (ID =35Adc tb (N) (P) − − 39.7 57.5 − − Reverse Recovery Stored Charge (ID = 3.5 Adc, VGS = 0 Vdc dIS/dt = 100 A/µs) QRR (N) (P) − − 0.048 0.088 − − µC 2. Switching characteristics are independent of operating junction temperature. |
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