LE25S40AMC

www.onsemi.com

2

Specifications

Absolute Maximum Ratings

Parameter

Symbol

Conditions

Ratings

unit

Maximum supply voltage

With respect to VSS

0.5 to +2.4

V

DC voltage (all pins)

With respect to VSS

0.5 to VDD+0.5

V

Storage temperature

Tstg

55 to +150

C

Operating Conditions

Parameter

Symbol

Conditions

Ratings

unit

Operating supply voltage

1.65 to 1.95

V

Operating ambient temperature

40 to +90

C

Allowable DC Operating Conditions

Parameter

Symbol

Conditions

Ratings

unit

min

typ

max

Read mode operating current

ICCR

SCK = 0.1VDD/0.9VDD,

HOLD = WP = 0.9VDD,

SO = open

Single

30MHz

6

mA

40MHz

8

mA

Dual

40MHz

10

mA

Write mode operating current

(erase+page program)

ICCW

tSSE = tSE = tCHE = typ., tPP = max

15

mA

CMOS standby current

ISB

CS = VDD, HOLD = WP = VDD,

SI = VSS/VDD, SO = open

50

A

Power-down standby current

IDSB

CS = VDD, HOLD = WP = VDD,

SI = VSS/VDD, SO = open

10

A

Input leakage current

ILI

2

A

Output leakage current

ILO

2

A

Input low voltage

VIL

0.3

0.3VDD

V

Input high voltage

VIH

0.7VDD

VDD+0.3

V

Output low voltage

VOL

IOL = 100A, VDD = VDD min

0.2

V

IOL = 1.6mA, VDD = VDD min

0.4

Output high voltage

VOH

IOH = 100A, VDD = VDD min

VCC0.2

V

Data hold, Rewriting frequency

Parameter

Conditions

min

max

unit

Rewriting frequency

Program/Erase

100,000

times/

Sector

Status resister write

1,000

Data hold

20

year

Pin Capacitance at Ta = 25

C, f = 1MHz

Parameter

Symbol

Conditions

Ratings

unit

max

Output pin capacitance

CSO

VSO = 0V

12

pF

Input pin capacitance

CIN

VIN = 0V

6

pF

Note: These parameter values do not represent the results of measurements undertaken for all devices but rather values for

some of the sampled devices.

Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed,

damage may occur and reliability may be affected.

Functional operation above the stresses listed in the Recommended Operating Ranges is not implied. Extended exposure to stresses beyond the Recommended

Operating Ranges limits may affect device reliability.