STB80NF55-06T datasheet(3/15 Pages) STMICROELECTRONICS

3 / 15 page

STB80NF55-06T

Electrical ratings

Doc ID 022702 Rev 1

3/15

Electrical ratings

Table 2.

Absolute maximum ratings

Symbol

Parameter

Value

Unit

VDS

Drain-source voltage

VGS

Gate- source voltage

± 20

(1)

Current limited by package.

Drain current (continuous) at TC = 25 °C

(1)

Drain current (continuous) at TC = 100 °C

IDM

(2)

Pulse width limited by safe operating area.

Drain current (pulsed)

320

Ptot

Total dissipation at TC = 25 °C

300

Long term load test (ID= 100 A, VSD= 15 V,

Tpulse=10 msec) ΔVSD (tested)

150

(3)

Guaranteed by process.

Short term load test (ID= 75 A, VSD= 15 V,

Tpulse=700 msec) ΔVSD (not tested)

1125

Derating Factor

W/°C

dv/dt(4)

ISD ≤ 80 A, di/dt ≤ 300 A/µs, VDD =V(BR)DSS, Tj ≤ TJMAX

Peak diode recovery avalanche energy

V/ns

EAS

(5)

Starting Tj = 25 °C, ID = 30 A, VDD =30 V

Single pulse avalanche energy

1.3

Tstg

Storage temperature

-55 to 175

°C

Max. operating junction temperature

Table 3.

Thermal data

Symbol

Parameter

Value

Unit

Rthj-case

Thermal resistance junction-case max.

0.5

°C/W

Rthj-pcb(1)

When mounted on 1 inch² FR4 2 oz Cu.

Thermal resistance junction-to pcb max.

35°C/W

STB80NF55-06T Datasheet(PDF) 3 Page - STMicroelectronics

STB80NF55-06T Datasheet(HTML) 3 Page - STMicroelectronics

Html Pages

1 2 3 4 5 6 7 8 9 10 11 12 13 14 15

Datasheet Download

Link URL