STB80NF55-06T datasheet(4/15 Pages) STMICROELECTRONICS

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Electrical characteristics

STB80NF55-06T

4/15

Doc ID 022702 Rev 1

Electrical characteristics

(TCASE= 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 250 µA, VGS =0

VBR0

VGS= 1.5 V, ID = 250 µA

VBR1

VGS= 1.5 V, ID = 10 mA

VBR2

VGS= 1.5 V, ID = 100 mA

IDSS

Zero gate voltage

drain current (VGS = 0)

VDS = 55 V

VDS = 55 V, TC = 125 °C

100

µA

IGSS

(1)

Tested @VGS= ±22 V at wafer level.

Gate-body leakage

current (VDS = 0)

VGS = ± 20 V

±100

VGS(th)

Gate threshold voltage

VDS = VGS, ID = 250 µA

VGS(th)

(2)

Guaranteed by process.

Tj=175 °C, VDS = VGS

ID = 1 mA

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 40 A

5.0

6.5

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS = 25 V, f = 1 MHz,

VGS = 0

4400

1020

350

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD = 27 V, ID = 60 A

RG =4.7 Ω VGS = 10 V

(see Figure 13)

155

125

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 44 V, ID = 80 A,

VGS = 4.5 V, RG = 10 Ω

(see Figure 14)

142

60.5

193

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