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STI300N4F6 Datasheet(PDF) 1 Page - STMicroelectronics |
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STI300N4F6 Datasheet(HTML) 1 Page - STMicroelectronics |
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1 / 13 page ![]() This is information on a product in full production. February 2013 Doc ID 18062 Rev 2 1/13 13 STI300N4F6 N-channel 40 V, 1.7 m Ω typ., 160 A, STripFET™ VI DeepGATE™ Power MOSFET in a I²PAK package Datasheet — production data Features ■ Standard level VGS(th) ■ 100% avalanche rated Applications ■ Automotive switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Figure 1. Internal schematic diagram Order code VDS RDS(on) max ID STI300N4F6 40 V 2.2 m Ω 160 A(1) 1. Limited by wire bonding 1 2 3 I²PAK AM01474v1 D (TAB or 2) G(1) S(3) Table 1. Device summary Order code Marking Package Packaging STI300N4F6 300N4F6 I²PAK Tube www.st.com |
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