STI300N4F6 datasheet(4/13 Pages) STMICROELECTRONICS

Part #	STI300N4F6

Description	N-channel 40 V, 1.7 mΩ typ., 160 A, STripFET™ VI DeepGATE™ Power MOSFET in a I²PAK package

PDF	13 Pages

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Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 13 page

Electrical characteristics

STI300N4F6

4/13

Doc ID 18062 Rev 2

Electrical characteristics

(TJ = 25 °C unless otherwise specified)

Table 4.

On/off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

V(BR)DSS

Drain-source breakdown

voltage (VGS=0)

ID= 250 µA

IDSS

Zero gate voltage drain

current

VDS = 40 V,

VDS = 40 V, TC=125 °C

100

µA

IGSS

Gate-source leakage

current

VGS = ±20 V, VDS = 0

100

VGS(th)

Gate threshold voltage

VDS= VGS, ID = 250 µA

RDS(on)

Static drain-source on-

resistance

VGS= 10 V, ID= 80 A

1.7

2.2

Table 5.

Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max. Unit

Ciss

Coss

Crss

Input capacitance

Output capacitance

Reverse transfer

capacitance

VDS =25 V, f = 1 MHz,

VGS = 0

13800

1870

1095

Qgs

Qgd

Total gate charge

Gate-source charge

Gate-drain charge

VDD = 20 V, ID = 160 A

VGS =10 V

(see Figure 14)

240

75.2

Table 6.

Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

td(off)

Turn-on delay time

Rise time

Turn-off delay time

Fall time

VDD= 20 V, ID= 80 A,

RG=4.7 Ω, VGS=10 V

(see Figure 13)

190

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