STL23NS3LLH7 datasheet(4/14 Pages) STMICROELECTRONICS

Part #	STL23NS3LLH7

Description	N-channel 30 V, 0.0027 Ω typ., 23 A STripFET™ H7 Power MOSFET plus monolithic Schottky in a PowerFLAT™ 3.3 x 3.3

PDF	14 Pages

Scroll/Zoom	100%

Manufacturer	STMICROELECTRONICS [STMicroelectronics]

Direct Link	http://www.st.com

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4 / 14 page

Electrical characteristics

STL23NS3LLH7

4/14

DocID025074 Rev 3

Electrical characteristics

(TC = 25 °C unless otherwise specified)

Table 4: On /off states

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

V(BR)DSS

Drain-source

breakdown voltage

ID = 1 mA, VGS = 0 V

IDSS

Zero gate voltage

drain current

VGS = 0 V

VDS = 24 V

500

µA

IGSS

Gate-body leakage

current

VGS = ± 20 V, VDS = 0 V

±100

VGS(th)

Gate threshold

voltage

VDS = VGS, ID = 1 mA

1.2

2.3

RDS(on)

Static drain-source

on-resistance

VGS = 10 V, ID = 11.5 A

0.0027

0.0037

Ω

VGS = 4.5 V, ID = 11.5 A

0.004

0.005

Ω

Table 5: Dynamic

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

Ciss

Input capacitance

VDS = 15 V, f = 1 MHz,

VGS = 0 V

2100

Coss

Output capacitance

850

Crss

Reverse transfer

capacitance

Total gate charge

VDD = 10 V, ID = 23 A,

VGS = 4.5 V

(see Figure 13: "Gate

charge test circuit")

13.7

Qgs

Gate-source charge

7.5

Qgd

Gate-drain charge

3.3

Table 6: Switching times

Symbol

Parameter

Test conditions

Min.

Typ.

Max.

Unit

td(on)

Turn-on delay time

VDD = 15 V, ID = 11.5 A,

RG = 3 Ω, VGS = 4.5 V

Rise time

td(off)

Turn-off delay time

Fall time

7.5

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